Gummel-poon model for 1.8kV SiC high-voltage bipolar junction transistor by BALACHANDRAN, S, CHOW, T. P, AGARWAL, A, TIPTON, W, SCOZZIE, S

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Novel 1 kv, normally-off, vertically integrated, dual-gate VJFET power switch with a low 4.6 mωcm2 on-state resistance by Nechay, B., Stewart, E., Veliadis, V., McNutt, T., Hearne, H., DeSalvo, G., Clarke, C., Scozzie, S.

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Investigation of temperature effects on electron transport in SiC using unique full band Monte Carlo simulation by Pennington, G., Goldsman, N., Scozzie, S., McGarrity, J.M., McLean, B.

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Gummel-Poon model for 1.8 kV SiC high-voltage bipolar junction transistor by Balachandran, S., Chow, T.P., Agarwal, A., Tipton, W., Scozzie, S.

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Advanced Dielectrics for Pulsed Power Capacitor Devices by Carr, S. Fries, Adams, S., Weimer, J., Wu, R. L. C., Kosai, H., Bray, K., Furmaniak, T., Barshaw, E., Scozzie, S., Jow, R., Garrison, R., Warnock, F.

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Advanced dielectrics for pulsed power capacitor devices: Journal of aerospace by CARR, S. Fries, ADAMS, S, GARRISON, R, WARNOCK, F, WEIMER, J, WU, R. L. C, KOSAI, H, BRAY, K, FURMANIAK, T, BARSHAW, E, SCOZZIE, S, JOW, R

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Advanced Dielectrics for Pulsed Power Capacitor Devices by Carr, S. Fries, Adams, S, Weimer, J, Wu, R. L. C, Kosai, H, Bray, K, Furmaniak, T, Barshaw, E, Scozzie, S, Jow, R, Garrison, R, Warnock, F

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Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV by Palmour, J. W., Cheng, L., Pala, V., Brunt, E. V., Lichtenwalner, D. J., Wang, G.-Y, Richmond, J., O'Loughlin, M., Ryu, S., Allen, S. T., Burk, A. A., Scozzie, C.

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Ultra high voltage MOS controlled 4H-SiC power switching devices by Ryu, S, Capell, C, Van Brunt, E, Jonas, C, O'Loughlin, M, Clayton, J, Lam, K, Pala, V, Hull, B, Lemma, Y, Lichtenwalner, D, Zhang, Q J, Richmond, J, Butler, P, Grider, D, Casady, J, Allen, S, Palmour, J, Hinojosa, M, Tipton, C W, Scozzie, C

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High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions by Schrock, James A., Ray, William B., Lawson, Kevin, Bilbao, Argenis, Bayne, Stephen B., Holt, Shad L., Lin Cheng, Palmour, John W., Scozzie, Charles

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Evaluation of Si and SiC SGTOs for High-Action Army Applications by O'Brien, H., Shaheen, W., Chiscop, V., Scozzie, C.J., Koebke, M.G.

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A 9-kV Normally-on Vertical-Channel SiC JFET for Unipolar Operation by Veliadis, V, Stewart, E J, Hearne, H, Snook, M, Lelis, A, Scozzie, C

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An evaluation system for experimental silicon and silicon carbide super gate turn off thyristors by Bayne, Stephen, Lacouture, Shelby, Lawson, Kevin, Giesselmann, Michael, Scozzie, Charles J, O'Brien, Heather, Ogunniyi, Aderinto A

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Automated modular high energy evaluation system for experimental thyristor devices by Lacouture, Shelby, Lawson, Kevin, Bayne, Stephen, Giesselmann, Michael, Scozzie, Charles J, O'Brien, Heather, Ogunniyi, Aderinto A

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Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 °C by VELIADIS, V, STEINER, B, SCOZZIE, C, LAWSON, K, BAYNE, S. B, URCIUOLI, D, HA, H. C, EL-HINNAWY, N, GUPTA, S, BORODULIN, P, HOWELL, R. S

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22 kV SiC Emitter turn-off (ETO) thyristor and its dynamic performance including SOA by Xiaoqing Song, Huang, Alex Q., Mengchia Lee, Chang Peng, Lin Cheng, O'Brien, Heather, Ogunniyi, Aderin, Scozzie, Charles, Palmour, John

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Degradation and Full Recovery in High-Voltage Implanted-Gate SiC JFETs Subjected to Bipolar Current Stress by Veliadis, V., Hearne, H., Stewart, E. J., Snook, M., Chang, W., Caldwell, J. D., Ha, H. C., El-Hinnawy, N., Borodulin, P., Howell, R. S., Urciuoli, D., Lelis, A., Scozzie, C.

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Evaluation of Advanced Si and SiC Switching Components for Army Pulsed Power Applications by O'Brien, H., Shaheen, W., Thomas, R.L., Crowley, T., Bayne, S.B., Scozzie, C.J.

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1000-V, 30-A 4H-SiC BJTs with high current gain by Krishnaswami, S., Agarwal, A., Sei-Hyung Ryu, Capell, C., Richmond, J., Palmour, J., Balachandran, S., Chow, T.P., Bayne, S., Geil, B., Jones, K., Scozzie, C.

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High Temperature Unclamped Inductive Switching Mode Evaluation of SiC JFET by Pushpakaran, B. N., Hinojosa, M., Bayne, S. B., Veliadis, V., Urciuoli, D., El-Hinnawy, N., Borodulin, P., Gupta, S., Scozzie, C.

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