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Defect Passivation With Fluorine and Interface Engineering for Hf-Based High- k/Metal Gate Stack Device Reliability and Performance Enhancement
by
Tseng Hsing-Huang
,
Tobin, P.J.
,
Kalpat, S.
,
Schaeffer, J.K.
,
Ramon, M.E.
,
Fonseca, L.R.C.
,
Jiang, Z.X.
,
Hegde, R.I.
,
Triyoso, D.H.
,
Semavedam, S.
Published in
IEEE transactions on electron devices
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Ieee Transactions On Electron Devices
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Applied Sciences
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Defect Passivation
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Defects
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Device Performance
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Devices
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Electronics
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Engineering
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Engineering, Electrical & Electronic
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Exact Sciences And Technology
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Fluorination
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Gates
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Hafnium
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High- K Dielectric
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Interface Engineering
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Metal Gate
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Metal Gates
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Microelectronic Fabrication
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Passivation
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Performance Enhancement
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Physical Sciences
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