Search Results - Semyagin, Boris R.

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  1. 1
    Metallic AsSb nanoinclusions strongly enriched by Sb in AlGaAsSb metamaterial

    Metallic AsSb nanoinclusions strongly enriched by Sb in AlGaAsSb metamaterial by Bert, Nikolay A., Chaldyshev, Vladimir V., Cherkashin, Nikolay A., Nevedomskiy, Vladimir N., Preobrazhenskii, Valery V., Putyato, Michael A., Semyagin, Boris R., Ushanov, Vitaliy I., Yagovkina, Maria A.

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  2. 2
    A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth

    A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth by Putyato, Mikhail A, Preobrazhenskii, Valerii V, Semyagin, Boris R, Fëklin, Dima F, Pakhanov, Nikolai A, Emelianov, Eugene A, Chikichev, Sergei I

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  3. 3
    GaAs MBE on vicinal substrates Si (001): Impact of nucleation and growth conditions on crystallographic properties of the epitaxial layers

    GaAs MBE on vicinal substrates Si (001): Impact of nucleation and growth conditions on crystallographic properties of the epitaxial layers by Petrushkov, Mikhail O., Putyato, Mikhail A., Preobrazhenskii, Valerii V., Semyagin, Boris R., Emelyanov, Eugene A.

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  4. 4
    Effects of method for formation of first monolayers on strain state of GaAs films on vicinal Si(001) Substrate

    Effects of method for formation of first monolayers on strain state of GaAs films on vicinal Si(001) Substrate by Loshkarev, Ivan D, Vasilenko, Anton P, Putyato, Mikhail A, Semyagin, Boris R, Preobrazhenskii, Valery V

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  5. 5
    A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth

    A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth by PUTYATO, Mikhail A, PREOBRAZHENSKII, Valerii V, SEMYAGIN, Boris R, FËKLIN, Dima F, PAKHANOV, Nikolai A, EMELIANOV, Eugene A, CHIKICHEV, Sergei I

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  6. 6
    The solid solutions (AIII) PxAs1−x: Mechanism of formation the V group sublattise composition

    The solid solutions (AIII) PxAs1−x: Mechanism of formation the V group sublattise composition by Emelyanov, Eugene A., Putyato, Mikhail A., Semyagin, Boris R., Feklin, Dmitry F., Preobrazhenskii, Valerii V.

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  7. 7
    Molecular beam epitaxy of solid solutions GaPxAs1−x: Effect of growth condition on the composition of group V sublattice

    Molecular beam epitaxy of solid solutions GaPxAs1−x: Effect of growth condition on the composition of group V sublattice by Emelyanov, Eugene A., Putyato, Mikhail A., Semyagin, Boris R., Feklin, Dmitrii F., Preobrazhenskii, Valerii V.

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  8. 8
    GaAs MBE on vicinal substrates Si(001): Impact of nucleation and growth conditions on surface morphology and crystallographic properties of the epitaxial layers

    GaAs MBE on vicinal substrates Si(001): Impact of nucleation and growth conditions on surface morphology and crystallographic properties of the epitaxial layers by Petrushkov, Mikhail O., Putyato, Mikhail A., Semyagin, Boris R., Emelyanov, Eugene A., Feklin, Dmitry F., Preobrazhenskii, Valerii V.

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  9. 9
    Effect of As2 and As4 fluxes on the morphology of GaSb(001) surface during growth of GaSb/InAs heterojunction by MBE

    Effect of As2 and As4 fluxes on the morphology of GaSb(001) surface during growth of GaSb/InAs heterojunction by MBE by Emelyanov, E. A., Putyato, M. A., Semyagin, B. R., Vasilenko, A., Feklin, D., Vasev, A. V., Preobrazhenskii, V. V.

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  10. 10
    Electrical properties of MIS-structures and Schottky barriers of Si/GaAs (001) interface

    Electrical properties of MIS-structures and Schottky barriers of Si/GaAs (001) interface by Aksenov, M. S., Preobrazhensky, V. V., Putyato, M. A., Semyagin, B. R., Valisheva, N. A., Tereshchenko, O. E.

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  11. 11
    Formation of HfO2/GaAs(001) interface with Si interlayer

    Formation of HfO2/GaAs(001) interface with Si interlayer by Golyashov, V. A., Aksenov, M. S., Valisheva, N. A., Prosvirin, I. P., Kalinkin, A. V., Preobrazhensky, V. V., Putyato, M. A., Semyagin, B. R., Tereshchenko, O. E.

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