Multibit Operation of hbox TiO x -Based ReRAM by Schottky Barrier Height Engineering by Park, Jubong, Biju, K P, Jung, Seungjae, Lee, Wootae, Lee, Joonmyoung, Kim, Seonghyun, Park, Sangsu, Shin, Jungho, Hwang, Hyunsang

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Proton Irradiation Effects on Resistive Random Access Memory With ZrO rm x /HfO rm x Stacks by Lee, Daeseok, Lee, Joonmyoung, Jung, Seungjae, Kim, Seonghyun, Park, Jubong, Biju, K P, Choe, Minhyeok, Lee, Takhee, Hwang, Hyunsang

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Characteristics of Traps Induced by Hot Holes Under Negative-Bias Temperature Stress in a pMOSFET by JO, Minseok, CHANG, Man, KIM, Seonghyun, JUNG, Seungjae, PARK, Ju-Bong, LEE, Joonmyoung, SEONG, Dong-Jun, HWANG, Hyunsang

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Resistive switching characteristics of ultra-thin TiO sub(x) by Park, Jubong, Jung, Seungjae, Lee, Joonmyoung, Lee, Wootae, Kim, Seonghyun, Shin, Jungho, Hwang, Hyunsang

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Effect of temperature on the development of Alphitobius diaperinus (Coleoptera: Tenebrionidae) by Kim, Seonghyun, Park, Haechul, Park, Ingyun, Han, Taeman, Kim, Hong Geuan

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Feasibility Study of [Formula Omitted] Resistive Random Access Memory in an Inverter Circuit for FPGA Applications by Park, Sangsu, Shin, Jungho, Cimino, Salvatore, Jung, Seungjae, Lee, Joonmyoung, Kim, Seonghyun, Park, Jubong, Lee, Wootae, Son, Myungwoo, Lee, Byunghun, Pantisano, Luigi, Hwang, Hyunsang

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Effect of temperature on the development of the Common Grass Yellow, Eurema hecabe by Kim, Seonghyun, Park, Haechul, Park, Ingyun

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TiO 2 -based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application by Shin, Jungho, Kim, Insung, Biju, Kuyyadi P., Jo, Minseok, Park, Jubong, Lee, Joonmyoung, Jung, Seungjae, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Hwang, Hyunsang

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Nonvolatile resistive switching in Pr 0.7 Ca 0.3 MnO 3 devices using multilayer graphene electrodes by Lee, Wootae, Jo, Gunho, Lee, Sangchul, Park, Jubong, Jo, Minseok, Lee, Joonmyoung, Jung, Seungjae, Kim, Seonghyun, Shin, Jungho, Park, Sangsu, Lee, Takhee, Hwang, Hyunsang

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Load balancing based on dynamic overlay clustering by Hojae Lee, Seonghyun Kim, Sooyong Choi, Chungyong Lee, Daesik Hong, Sanghoon Lee, Jungshin Park, Jonghyung Kwun

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Characterization of fast charge trapping in bias temperature instabilityin metal-oxide-semiconductor field effect transistor with highdielectric constant by Jo, Minseok, Kim, Seonghyun, Lee, Joonmyoung, Jung, Seungjae, Park, Ju-Bong, Jung, Hyung-Suk, Choi, Rino, Hwang, Hyunsang

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Resistive switching characteristics of ultra-thin TiO x by Park, Jubong, Jung, Seungjae, Lee, Joonmyoung, Lee, Wootae, Kim, Seonghyun, Shin, Jungho, Hwang, Hyunsang

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Effect of Scaling \hbox-Based RRAMs on Their Resistive Switching Characteristics by Seonghyun Kim, Biju, K P, Minseok Jo, Seungjae Jung, Jubong Park, Joonmyoung Lee, Wootae Lee, Jungho Shin, Sangsu Park, Hyunsang Hwang

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Effect of Scaling hbox WO x -Based RRAMs on Their Resistive Switching Characteristics by Kim, Seonghyun, Biju, Kuyyadi P, Jo, Minseok, Jung, Seungjae, Park, Jubong, Lee, Joonmyoung, Lee, Wootae, Shin, Jungho, Park, Sangsu, Hwang, Hyunsang

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Effect of Scaling [Formula Omitted]-Based RRAMs on Their Resistive Switching Characteristics by Kim, Seonghyun, Biju, Kuyyadi P, Jo, Minseok, Jung, Seungjae, Park, Jubong, Lee, Joonmyoung, Lee, Wootae, Shin, Jungho, Park, Sangsu, Hwang, Hyunsang

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Improved switching characteristics of perovskite oxide-based resistance random access memory by high-pressure oxygen annealing at low temperature by Lee, Wootae, Jo, Minseok, Park, Jubong, Lee, Joonmyoung, Park, Sangsu, Kim, Seonghyun, Jung, Seungjae, Shin, Jungho, Lee, Daeseok, Siddik, Manzar, Hwang, Hyunsang

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High Accuracy Mass Measurement Approach in the Identification of Phospholipids in Lipid Extracts: 7 T Fourier-transform Mass Spectrometry and MS/MS Validation by Yu, Seong-Hyun, Lee, Youn-Jin, Park, Soo-Jin, Lee, Ye-Won, Cho, Kun, Kim, Young-Hwan, Oh, Han-Bin

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25th Annual Computational Neuroscience Meeting: CNS-2016 by Sharpee, Tatyana O., Destexhe, Alain, Kawato, Mitsuo, Sekulić, Vladislav, Skinner, Frances K., Wójcik, Daniel K., Chintaluri, Chaitanya, Cserpán, Dorottya, Somogyvári, Zoltán, Kim, Jae Kyoung, Kilpatrick, Zachary P., Bennett, Matthew R., Josić, Kresimir, Elices, Irene, Arroyo, David, Levi, Rafael, Rodriguez, Francisco B., Varona, Pablo, Hwang, Eunjin, Kim, Bowon, Han, Hio-Been, Kim, Tae, McKenna, James T., Brown, Ritchie E., McCarley, Robert W., Choi, Jee Hyun, Rankin, James, Popp, Pamela Osborn, Rinzel, John, Tabas, Alejandro, Rupp, André, Balaguer-Ballester, Emili, Maturana, Matias I., Grayden, David B., Cloherty, Shaun L., Kameneva, Tatiana, Ibbotson, Michael R., Meffin, Hamish, Koren, Veronika, Lochmann, Timm, Dragoi, Valentin, Obermayer, Klaus, Psarrou, Maria, Schilstra, Maria, Davey, Neil, Torben-Nielsen, Benjamin, Steuber, Volker, Ju, Huiwen, Yu, Jiao, Hines, Michael L., Chen, Liang, Yu, Yuguo, Kim, Jimin, Leahy, Will, Shlizerman, Eli, Birgiolas, Justas, Gerkin, Richard C., Crook, Sharon M., Viriyopase, Atthaphon, Memmesheimer, Raoul-Martin, Gielen, Stan, Dabaghian, Yuri, DeVito, Justin, Perotti, Luca, Kim, Anmo J., Fenk, Lisa M., Cheng, Cheng, Maimon, Gaby, Zhao, Chang, Widmer, Yves, Sprecher, Simon, Senn, Walter, Halnes, Geir, Mäki-Marttunen, Tuomo, Keller, Daniel, Pettersen, Klas H., Andreassen, Ole A., Einevoll, Gaute T., Yamada, Yasunori, Steyn-Ross, Moira L., Alistair Steyn-Ross, D., Mejias, Jorge F., Murray, John D., Kennedy, Henry, Wang, Xiao-Jing, Kruscha, Alexandra, Grewe, Jan, Benda, Jan, Lindner, Benjamin, Badel, Laurent, Ohta, Kazumi, Tsuchimoto, Yoshiko, Kazama, Hokto, Kahng, B., Tam, Nicoladie D., Pollonini, Luca, Zouridakis, George, Soh, Jaehyun, Kim, DaeEun, Yoo, Minsu

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Effect of Fast Components in Threshold-Voltage Shift on Bias Temperature Instability in High-[Formula Omitted] MOSFETs by Jo, Minseok, Kim, Seonghyun, Jung, Seungjae, Park, Ju-Bong, Lee, Joonmyoung, Jung, Hyung-Suk, Choi, Rino, Hwang, Hyunsang

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Effect of Fast Components in Threshold-Voltage Shift on Bias Temperature Instability in High-κ MOSFETs by JO, Minseok, KIM, Seonghyun, JUNG, Seungjae, PARK, Ju-Bong, LEE, Joonmyoung, JUNG, Hyung-Suk, CHOI, Rino, HWANG, Hyunsang

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