Anisotropic Electron Mobility and Contact Resistance of β‑Ga2O3 Obtained via Radio Frequency Transmission Line Methods on Schottky Devices by Kim, Hyun-Jung, Hong, Sungjae, Jang, Chorom, Jin, Hye-Jin, Woo, Haneul, Bae, Heesun, Im, Seongil

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5 nm Ultrathin Crystalline Ferroelectric P(VDF‐TrFE)‐Brush Tuned for Hysteresis‐Free Sub 60 mV dec−1 Negative‐Capacitance Transistors by Cho, Hyunmin, Jin, Hye‐Jin, Lee, Sol, Jeon, Seungbae, Cho, Yongjae, Park, Sam, Jang, Myeongjin, Widiapradja, Livia Janice, Ryu, Du Yeol, Park, Ji Hoon, Kim, Kwanpyo, Im, Seongil

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Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free BaxSr1‐xTiO3 and MoS2 Channel by Jeong, Yeonsu, Jin, Hye‐Jin, Park, Ji Hoon, Cho, Yongjae, Kim, Minju, Hong, Sungjae, Jo, William, Yi, Yeonjin, Im, Seongil

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Graphene Versus Ohmic Metal as Source-Drain Electrode for MoS2 Nanosheet Transistor Channel by Lee, Young Tack, Choi, Kyunghee, Lee, Hee Sung, Min, Sung-Wook, Jeon, Pyo Jin, Hwang, Do Kyung, Choi, Hyoung Joon, Im, Seongil

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Plasma jet assisted carbonization and activation of coffee ground waste by Kang, Hongjae, Choi, Seongil, Lee, Jin Hee, Kim, Kwan-Tae, Song, Young-Hoon, Lee, Dae Hoon

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Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides by Kim, Youngjun, Song, Jeong-Gyu, Park, Yong Ju, Ryu, Gyeong Hee, Lee, Su Jeong, Kim, Jin Sung, Jeon, Pyo Jin, Lee, Chang Wan, Woo, Whang Je, Choi, Taejin, Jung, Hanearl, Lee, Han-Bo-Ram, Myoung, Jae-Min, Im, Seongil, Lee, Zonghoon, Ahn, Jong-Hyun, Park, Jusang, Kim, Hyungjun

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Low Power Consumption Complementary Inverters with n‑MoS2 and p‑WSe2 Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode Circuits by Jeon, Pyo Jin, Kim, Jin Sung, Lim, June Yeong, Cho, Youngsuk, Pezeshki, Atiye, Lee, Hee Sung, Yu, Sanghyuck, Min, Sung-Wook, Im, Seongil

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Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe2/MoTe2 Stack Channel by Park, Sam, Jeong, Yeonsu, Jin, Hye-Jin, Park, Junkyu, Jang, Hyenam, Lee, Sol, Huh, Woong, Cho, Hyunmin, Shin, Hyung Gon, Kim, Kwanpyo, Lee, Chul-Ho, Choi, Shinhyun, Im, Seongil

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MoS2 Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel by Lee, Hee Sung, Min, Sung-Wook, Park, Min Kyu, Lee, Young Tack, Jeon, Pyo Jin, Kim, Jae Hoon, Ryu, Sunmin, Im, Seongil

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Dual Gate Black Phosphorus Field Effect Transistors on Glass for NOR Logic and Organic Light Emitting Diode Switching by Kim, Jin Sung, Jeon, Pyo Jin, Lee, Junyeong, Choi, Kyunghee, Lee, Hee Sung, Cho, Youngsuk, Lee, Young Tack, Hwang, Do Kyung, Im, Seongil

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Nonhomogeneous Noise Removal From Side-Scan Sonar Images Using Structural Sparsity by Jin, Youngsaeng, Ku, Bonhwa, Ahn, Jaekyun, Kim, Seongil, Ko, Hanseok

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Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters by Lee, Han Sol, Choi, Kyunghee, Kim, Jin Sung, Yu, Sanghyuck, Ko, Kyeong Rok, Im, Seongil

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High-Performance, Air-Stable, Top-Gate, p-Channel WSe2 Field-Effect Transistor with Fluoropolymer Buffer Layer by Shokouh, Seyed Hossein Hosseini, Jeon, Pyo Jin, Pezeshki, Atiye, Choi, Kyunghee, Lee, Hee Sung, Kim, Jin Sung, Park, Eun Young, Im, Seongil

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Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α‑MoTe2 p‑Channel and MoS2 n‑Channel Transistors by Pezeshki, Atiye, Hosseini Shokouh, Seyed Hossein, Jeon, Pyo Jin, Shackery, Iman, Kim, Jin Sung, Oh, Il-Kwon, Jun, Seong Chan, Kim, Hyungjun, Im, Seongil

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Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer by Lee, Young Tack, Kwon, Hyeokjae, Kim, Jin Sung, Kim, Hong-Hee, Lee, Yun Jae, Lim, Jung Ah, Song, Yong-Won, Yi, Yeonjin, Choi, Won-Kook, Hwang, Do Kyung, Im, Seongil

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Quaternary NAND Logic and Complementary Ternary Inverter with p‐MoTe 2 /n‐MoS 2 Heterostack Channel Transistors by Park, Sam, Lee, Han Joo, Choi, Wonjun, Jin, Hye‐Jin, Cho, Hyunmin, Jeong, Yeonsu, Lee, Sol, Kim, Kwanpyo, Im, Seongil

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Few-Layer MoS2-Organic Thin-Film Hybrid Complementary Inverter Pixel Fabricated on a Glass Substrate by Lee, Hee Sung, Shin, Jae Min, Jeon, Pyo Jin, Lee, Junyeong, Kim, Jin Sung, Hwang, Hyun Chul, Park, Eunyoung, Yoon, Woojin, Ju, Sang-Yong, Im, Seongil

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Ambipolar Channel p‐TMD/n‐Ga 2 O 3 Junction Field Effect Transistors and High Speed Photo‐sensing in TMD Channel by Choi, Wonjun, Ahn, Jongtae, Kim, Ki‐Tae, Jin, Hye‐Jin, Hong, Sungjae, Hwang, Do Kyung, Im, Seongil

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Intrinsic Correlation between Electronic Structure and Degradation: From Few‐Layer to Bulk Black Phosphorus by Kim, Minju, Kim, Han‐gyu, Park, Soohyung, Kim, Jin Sung, Choi, Hyoung Joon, Im, Seongil, Lee, Hyunbok, Kim, Taekyeong, Yi, Yeonjin

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Charge-Transfer-Induced p‑Type Channel in MoS2 Flake Field Effect Transistors by Min, Sung-Wook, Yoon, Minho, Yang, Sung Jin, Ko, Kyeong Rok, Im, Seongil

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