Search Results - Seryogin, George A.

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  1. 1
    High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

    High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia by Nikishin, Sergey A., Faleev, Nikolai N., Antipov, Vladimir G., Francoeur, Sebastien, Peralta, Luis Grave de, Seryogin, George A., Holtz, Mark, Prokofyeva, Tat’yana I., Chu, S. N. G., Zubrilov, Andrei S., Elyukhin, Vyacheslav A., Nikitina, Irina P., Nikolaev, Andrei, Melnik, Yuriy, Dmitriev, Vladimir, Temkin, Henryk

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  2. 2
    MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor

    MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor by Seryogin, George, Alema, Fikadu, Valente, Nicholas, Fu, Houqiang, Steinbrunner, Erich, Neal, Adam T., Mou, Shin, Fine, Aaron, Osinsky, Andrei

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  3. 3
    Ge doping of β-Ga2O3 by MOCVD

    Ge doping of β-Ga2O3 by MOCVD by Alema, Fikadu, Seryogin, George, Osinsky, Alexei, Osinsky, Andrei

    Published in APL materials
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  4. 4
    Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm

    Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm by Bhattacharyya, Arkka, Ranga, Praneeth, Roy, Saurav, Peterson, Carl, Alema, Fikadu, Seryogin, George, Osinsky, Andrei, Krishnamoorthy, Sriram

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  5. 5
    Catalytic hydride vapour phase epitaxy growth of GaN nanowires

    Catalytic hydride vapour phase epitaxy growth of GaN nanowires by Seryogin, George, Shalish, Ilan, Moberlychan, Warren, Narayanamurti, Venkatesh

    Published in Nanotechnology
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  6. 6
    Development of Neural Network-based Autofocusing Module of Digital Microscopy System for Cytology

    Development of Neural Network-based Autofocusing Module of Digital Microscopy System for Cytology by Kolokolnikov, George A., Seryogin, Gennady E., Samorodov, Andrey V.

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  7. 7
    Multi-kV class \(\beta\)-Ga\(_2\)O\(_3\) MESFETs with a Lateral Figure of Merit up to 355 MW/cm\(^2\)

    Multi-kV class \(\beta\)-Ga\(_2\)O\(_3\) MESFETs with a Lateral Figure of Merit up to 355 MW/cm\(^2\) by Bhattacharyya, Arkka, Praneeth Ranga, Roy, Saurav, Peterson, Carl, Fikadu Alema, Seryogin, George, Osinsky, Andrei, Krishnamoorthy, Sriram

    Published in arXiv.org
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  8. 8
    4.4 kV \(\beta\)-Ga\(_2\)O\(_3\) Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm\(^2\)

    4.4 kV \(\beta\)-Ga\(_2\)O\(_3\) Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm\(^2\) by Bhattacharyya, Arkka, Sharma, Shivam, Fikadu Alema, Praneeth Ranga, Roy, Saurav, Peterson, Carl, Seryogin, George, Osinsky, Andrei, Singisetti, Uttam, Krishnamoorthy, Sriram

    Published in arXiv.org
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