Search Results - Seungho Pyi

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  1. 1
    Advanced DC-SF Cell Technology for 3-D NAND Flash

    Advanced DC-SF Cell Technology for 3-D NAND Flash by Aritome, S., Yoohyun Noh, Hyunseung Yoo, Eun Seok Choi, Han Soo Joo, Youngsoo Ahn, Byeongil Han, Sungjae Chung, Keonsoo Shim, Keunwoo Lee, Sanghyon Kwak, Sungchul Shin, Iksoo Choi, Sanghyuk Nam, Gyuseog Cho, Dongsun Sheen, Seungho Pyi, Jongmoo Choi, Sungkye Park, Jinwoong Kim, Seokkiu Lee, Sungjoo Hong, Sungwook Park, Kikkawa, T.

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  2. 2
    A New Metal Control Gate Last process (MCGL process) for high performance DC-SF (Dual Control gate with Surrounding Floating gate) 3D NAND flash memory

    A New Metal Control Gate Last process (MCGL process) for high performance DC-SF (Dual Control gate with Surrounding Floating gate) 3D NAND flash memory by Yoohyun Noh, Youngsoo Ahn, Hyunseung Yoo, Byeongil Han, Sungjae Chung, Keonsoo Shim, Keunwoo Lee, Sanghyon Kwak, Sungchul Shin, Iksoo Choi, Sanghyuk Nam, Gyuseog Cho, Dongsun Sheen, Seungho Pyi, Jongmoo Choi, Sungkye Park, Jinwoong Kim, Seokkiu Lee, Aritome, S., Sungjoo Hong, Sungwook Park

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  3. 3
    CVD-cobalt for low resistance word line electrode of 3D NAND flash memory

    CVD-cobalt for low resistance word line electrode of 3D NAND flash memory by MinSoo Kim, SungJin Whang, YoungJin Lee, JooHee Han, JinHae Choi, ByoungHo Lee, DongSun Sheen, SeungHo Pyi, JinWoong Kim

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    Incorporation Effect of Thin Al 2 O 3 Layers on ZrO 2 –Al 2 O 3 Nanolaminates in a Composite Oxide–High-κ-Oxide Stack for Floating-Gate Flash Memory Devices

    Incorporation Effect of Thin Al 2 O 3 Layers on ZrO 2 –Al 2 O 3 Nanolaminates in a Composite Oxide–High-κ-Oxide Stack for Floating-Gate Flash Memory Devices by Joo, Moon Sig, Lee, Seung Ryong, Yang, Hong-Seon, Hong, Kwon, Jang, Se-Aug, Koo, Jaehyoung, Kim, Jaemun, Shin, Seungwoo, Kim, Myungok, Pyi, Seungho, Kwak, Nojung, Kim, Jin Woong

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