Ion-Beam Lithography: Modelling and Analytical Description of the Deposited in Resist Energy by Shabelnikova, Ya. L., Zaitsev, S. I.

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Organic Resist Contrast Determination in Ion Beam Lithography by Shabelnikova, Ya. L., Zaitsev, S. I., Gusseinov, N., Gabdullin, M., Muratov, M. M.

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A Confocal Collimator for Radionuclide Diagnostics and X-Ray Fluorescence Analysis by Zaitsev, S. I., Trofimov, O. V., Shabelnikova, Ya. L., Chukalina, M. V.

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Comparison between the EBIC and XBIC contrasts of dislocations and grain boundaries by Shabel’nikova, Ya. L., Yakimov, E. B.

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Automatic Object Detection on Tomographic Projections by Ivanov, D. A., Chukalina, M. V., Ingacheva, A. S., Buzmakov, A. V., Krivonosov, Yu. S., Shabelnikova, Ya. L., Nikolaev, D. P.

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Rate of generation of nonequilibrium charge carriers by a focused X-ray beam by Shabel’nikova, Ya. L., Yakimov, E. B.

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Calculating the extended defect contrast for the X-ray-beam-induced current method by Shabel’nikova, Ya. L., Yakimov, E. B., Grigor’ev, M. V., Fahrtdinov, R. R., Bushuev, V. A.

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Energy and Transport Lengths for Describing Volume of Resist Modification in Ion-Beam Lithography by Shabelnikova, Ya. L., Zaitsev, S. I.

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Comparative study of X-ray fluorescence signal collection by collimators of two types by Shabel’nikova, Ya. L., Chukalina, M. V.

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Refractive X-ray lenses with rotation profile and curvature-radius scale reduction by Aristov, V. V., Shabel’nikov, L. G., Shabel’nikova, Ya. L., Sagdullin, T. A., Panchenko, V. Ya, Evseev, A. V., Novikov, M. M., Asadchikov, V. E., Buzmakov, A. V.

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Quantitative description of the properties of extended defects in silicon by means of electron- and laser-beam-induced currents by Shabelnikova, Ya. L., Yakimov, E. B., Nikolaev, D. P., Chukalina, M. V.

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