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Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution
by
Van Beek, Simon
,
Rao, Siddharth
,
Kundu, Shreya
,
Kim, Woojin
,
O'Sullivan, Barry J.
,
Cosemans, Stefan
,
Yasin, Farukh
,
Carpenter, Robert
,
Couet, Sebastien
,
Sharifi, Shamin H.
,
Jossart, Nico
,
Crotti, Davide
,
Kar, Gouri
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La Doped HZO-Based 3D-Trench Metal-Ferroelectric-Metal Capacitors With High-Endurance (>10¹²) for FeRAM Applications
by
Walke, Amey M.
,
Popovici, Mihaela I.
,
Sharifi, Shamin H.
,
Demir, Eyup C.
,
Puliyalil, Harinarayanan
,
Bizindavyi, Jasper
,
Yasin, Farrukh
,
Clima, Sergiu
,
Fantini, Andrea
,
Belmonte, Attilio
,
Kar, Gouri S.
,
Houdt, Jan V.
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IEEE electron device letters
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10¹²) for FeRAM Applications
by
Walke, Amey M
,
Popovici, Mihaela I
,
Sharifi, Shamin H
,
Demir, Eyup C
,
Harinarayanan Puliyalil
,
Bizindavyi, Jasper
,
Yasin, Farrukh
,
Clima, Sergiu
,
Fantini, Andrea
,
Belmonte, Attilio
,
Kar, Gouri S
,
Houdt, Jan V
Published in
IEEE electron device letters
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Ieee Electron Device Letters
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Engineering
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Engineering, Electrical & Electronic
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Science & Technology
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Technology
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1012 Endurance
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3D Ferroelectric Capacitors
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Anneal
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Annealing
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Breakdown
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Capacitors
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Damage
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Endurance
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Engineering, Multidisciplinary
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Etchback
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Ferroelectric Films
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High Endurance
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High Temperature
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Hzo
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Imprint In Doped Hzo
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Ion Beams
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Ieee Xplore All Journals
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