Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique by Malin, T.V., Mansurov, V.G., Galitsyn, Yu.G., Milakhin, D.S., Protasov, D.Yu, Ber, B.Ya, Kazantsev, D.Yu, Ratnikov, V.V., Shcheglov, M.P., Smirnov, A.N., Davydov, V.Yu, Zhuravlev, K.S.

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On the Structural Perfection of Large-Diameter Silicon Carbide Ingots by Bykov, Yu. O., Lebedev, A. O., Shcheglov, M. P.

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Frozen Superparaelectric State of Local Polar Regions in Gd[Mn.sub.2][O.sub.5] and [Gd.sub.0.8][Ce.sub.0.2]Mn[O.sub.5] by Sanina, V.A, Khannanov, B.Kh, Golovenchits, E.I, Shcheglov, M.P

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A study of the intermediate layer in 3C–SiC/6H–SiC heterostructures by Lebedev, A.A., Zamoryanskaya, M.V., Davydov, S. Yu, Kirilenko, D.A., Lebedev, S.P., Sorokin, L.M., Shustov, D.B., Shcheglov, M.P.

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Prevention of AlN crystal from cracking on SiC substrates by evaporation of the substrates by Argunova, T. S., Gutkin, M. Yu, Mokhov, E. N., Kazarova, O. P., Lim, J.-H., Shcheglov, M. P.

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Block structure and residual stresses in tubular sapphire single crystals grown by the Stepanov method by Krymov, V. M., Nosov, Yu. G., Bakholdin, S. I., Maslov, V. N., Shul’pina, I. L., Shcheglov, M. P.

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X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals by Shul’pina, I. L., Kyutt, R. N., Ratnikov, V. V., Prokhorov, I. A., Bezbakh, I. Zh, Shcheglov, M. P.

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A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum by Lebedev, A. A., Zelenin, V. V., Abramov, P. L., Bogdanova, E. V., Lebedev, S. P., Nel’son, D. K., Razbirin, B. S., Shcheglov, M. P., Tregubova, A. S., Suvajarvi, M., Yakimova, R.

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Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates by Lebedev, A. A., Zelenin, V. V., Abramov, P. L., Lebedev, S. P., Smirnov, A. N., Sorokin, L. M., Shcheglov, M. P., Yakimova, R.

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Raman scattering in PbTe and PbSnTe films: In situ phase transformations by Volodin, V. A., Sinyukov, M. P., Shcheglov, D. V., Latyshev, A. V., Fedosenko, E. V.

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Search for CP violation in Λb0→pK− and Λb0→pπ− decays by Adinolfi, M., Aidala, C.A., Ajaltouni, Z., Alfonso Albero, A., Alkhazov, G., Alves, A.A., Andrews, J.E., Batozskaya, V., Bedeschi, F., Beiter, A., Bel, L.J., Blake, T., Borghi, S., Borisyak, M., Borsato, M., Boubdir, M., Bowcock, T.J.V., Buonaura, A., Cadeddu, S., Calvo Gomez, M., Cardini, A., Chatzikonstantinidis, G., Chrzaszcz, M., Chubykin, A., Clarke, P.E.L., Costa Sobral, C.M., Craik, D.C., D'Ambrosio, C., Davis, A., De Aguiar Francisco, O., De Cian, M., Dosil Suárez, A., Dreimanis, K., Dufour, L., Durham, J.M., Dzyuba, A., Ene, A., Federici, L., Fitzpatrick, C., Franco Lima, V., Galli, D., Gao, Y., Gersabeck, E., Gizdov, K., Graciani Diaz, R., Granado Cardoso, L.A., Greim, R., Grünberg, O., He, J., Humair, T., Ketel, T., Klimkovich, T., Kostiuk, I., Kress, F., Kucewicz, W., Lacarrere, D., Lancierini, D., Lucio Martinez, M., Luppi, E., Lyu, X., Maisuzenko, D., Marinangeli, M., Materok, M., Mauri, A., McNab, A., Mitzel, D.S., Molina Rodriguez, J., Morris, A.B., Neri, N., Neuner, M., Otalora Goicochea, J.M., Patel, M., Patrignani, C., Perazzini, S., Pietrzyk, B., Pinzino, J., Polukhina, N., Ratnikov, F., Rodrigues, A.B., Sanchez Gras, C., Schmelzer, T., Schneider, O., Seyfert, P., Siddi, B.G., Simi, G., Skwarnicki, T., Smith, I.T., Stahl, M., Stemmle, S., Stramaglia, M.E., Strokov, S., Syropoulos, V., Tellarini, G., Tisserand, V., Tou, D.Y., Vazquez Regueiro, P., Waldi, R., Ward, D.R., Weisser, C., Yuan, X.

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