Search Results - Shekhawat, Aniruddh

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  1. 1
    Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films

    Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films by Walters, Glen, Shekhawat, Aniruddh, Moghaddam, Saeed, Jones, Jacob L., Nishida, Toshikazu

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  2. 2
    Tiered deposition of sub-5 nm ferroelectric Hf1-xZrxO2 films on metal and semiconductor substrates

    Tiered deposition of sub-5 nm ferroelectric Hf1-xZrxO2 films on metal and semiconductor substrates by Walters, Glen, Shekhawat, Aniruddh, Rudawski, Nicholas G., Moghaddam, Saeed, Nishida, Toshikazu

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  3. 3
    Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

    Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes by An, Yanbin, Shekhawat, Aniruddh, Behnam, Ashkan, Pop, Eric, Ural, Ant

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  4. 4
    Effect of Forming Gas Furnace Annealing on the Ferroelectricity and Wake-Up Effect of Hf0.5Zr0.5O2 Thin Films

    Effect of Forming Gas Furnace Annealing on the Ferroelectricity and Wake-Up Effect of Hf0.5Zr0.5O2 Thin Films by Shekhawat, Aniruddh, Walters, Glen, Chung, Ching-Chang, Garcia, Roberto, Liu, Yang, Jones, Jacob, Nishida, Toshikazu, Moghaddam, Saeed

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  5. 5
    Effect of ferroelectric and interface films on the tunneling electroresistance of the Al 2 O 3 /Hf 0.5 Zr 0.5 O 2 based ferroelectric tunnel junctions

    Effect of ferroelectric and interface films on the tunneling electroresistance of the Al 2 O 3 /Hf 0.5 Zr 0.5 O 2 based ferroelectric tunnel junctions by Shekhawat, Aniruddh, Hsain, H Alex, Lee, Younghwan, Jones, Jacob L, Moghaddam, Saeed

    Published in Nanotechnology
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  6. 6
    Effect of ferroelectric and interface films on the tunneling electroresistance of the Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions

    Effect of ferroelectric and interface films on the tunneling electroresistance of the Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions by Shekhawat, Aniruddh, Hsain, H Alex, Lee, Younghwan, Jones, Jacob L, Moghaddam, Saeed

    Published in Nanotechnology
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  7. 7
    Effect of ferroelectric and interface films on the tunneling electroresistance of the Al2O3/Hf0.5Zr0.5O2based ferroelectric tunnel junctions

    Effect of ferroelectric and interface films on the tunneling electroresistance of the Al2O3/Hf0.5Zr0.5O2based ferroelectric tunnel junctions by Shekhawat, Aniruddh, Hsain, H Alex, Lee, Younghwan, Jones, Jacob L, Moghaddam, Saeed

    Published in Nanotechnology
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  8. 8
    Data retention and low voltage operation of Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions

    Data retention and low voltage operation of Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions by Shekhawat, Aniruddh, Walters, Glen, Yang, Ning, Guo, Jing, Nishida, Toshikazu, Moghaddam, Saeed

    Published in Nanotechnology
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  9. 9
    Data retention and low voltage operation of Al 2 O 3 /Hf 0.5 Zr 0.5 O 2 based ferroelectric tunnel junctions

    Data retention and low voltage operation of Al 2 O 3 /Hf 0.5 Zr 0.5 O 2 based ferroelectric tunnel junctions by Shekhawat, Aniruddh, Walters, Glen, Yang, Ning, Guo, Jing, Nishida, Toshikazu, Moghaddam, Saeed

    Published in Nanotechnology
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  10. 10
    Effect of furnace annealing on the ferroelectricity of Hf0.5 Zr0.5O2 thin films

    Effect of furnace annealing on the ferroelectricity of Hf0.5 Zr0.5O2 thin films by Shekhawat, Aniruddh, Walters, Glen, Chung, Ching-Chang, Garcia, Roberto, Liu, Yang, Jones, Jacob, Nishida, Toshikazu, Moghaddam, Saeed

    Published in Thin solid films
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  11. 11
    Effect of Forming Gas Furnace Annealing on the Ferroelectricity and Wake-Up Effect of Hf 0.5 Zr 0.5 O 2 Thin Films

    Effect of Forming Gas Furnace Annealing on the Ferroelectricity and Wake-Up Effect of Hf 0.5 Zr 0.5 O 2 Thin Films by Shekhawat, Aniruddh, Walters, Glen, Chung, Ching-Chang, Garcia, Roberto, Liu, Yang, Jones, Jacob, Nishida, Toshikazu, Moghaddam, Saeed

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