Search Results - Shen, Yao-Luen

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  1. 1
    Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated With Indium-Tin-Oxide Electrodes

    Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated With Indium-Tin-Oxide Electrodes by Chang, Chih-Yao, Hsu, Chun-Ta, Shen, Yao-Luen, Wu, Tian-Li, Kuo, Wei-Hung, Lin, Suh-Fang, Huang, Chih-Fang

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  2. 2
    Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium-Tin-Oxide Gate Electrode

    Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium-Tin-Oxide Gate Electrode by Chang, Chih-Yao, Wang, Chien-Sheng, Wang, Ching-Yao, Shen, Yao-Luen, Wu, Tian-Li, Kuo, Wei-Hung, Lin, Suh-Fang, Huang, Chih-Fang

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  3. 3
    Investigation on Stability of p-GaN HEMTs With an Indium-Tin-Oxide Gate Under Forward Gate Bias

    Investigation on Stability of p-GaN HEMTs With an Indium-Tin-Oxide Gate Under Forward Gate Bias by Chang, Chih-Yao, Shen, Yao-Luen, Wang, Ching-Yao, Tang, Shun-Wei, Wu, Tian-Li, Kuo, Wei-Hung, Lin, Suh-Fang, Huang, Chih-Fang

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  4. 4
    Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height

    Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height by Lin, Ya-Xun, Chao, Der-Sheng, Liang, Jenq-Horng, Shen, Yao-Luen, Huang, Chih-Fang, Hall, Steve, Mitrovic, Ivona Z.

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  5. 5
    Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT

    Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT by Shen, Yao-Luen, Chang, Chih-Yao, Chen, Po-Liang, Tai, Cheng-Chan, Wu, Tian-Li, Wu, Yuh-Renn, Huang, Chih-Fang

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  6. 6
    Reliability of Quasi-vertical GaN on Silicon Schottky Barrier Diodes With SiO₂ Passivation Layer Under On-State Stress Bias

    Reliability of Quasi-vertical GaN on Silicon Schottky Barrier Diodes With SiO₂ Passivation Layer Under On-State Stress Bias by Lin, Ya-Xun, Chao, Der-Sheng, Liang, Jenq-Horng, Shen, Yao-Luen, Huang, Chih-Fang, Hall, Steve, Mitrovic, Ivona Z.

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  7. 7
    Process improvement of p-GaN HEMTs with a u-GaN etching buffer layer inserted

    Process improvement of p-GaN HEMTs with a u-GaN etching buffer layer inserted by Chang, Chih-Yao, Shen, Yao-Luen, Tang, Shun-Wei, Wu, Tian-Li, Kuo, Wei-Hung, Lin, Suh-Fang, Wu, Yuh-Renn, Huang, Chih-Fang

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  8. 8
    Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted

    Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted by Chang, Chih-Yao, Wu, Kuan-Ju, Shen, Yao-Luen, Wu, Tian-Li, Kuo, Wei-Hung, Lin, Suh-Fang, Huang, Chih-Fang

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