Direct-Liquid-Injection Chemical Vapor Deposition of Nickel Nitride Films and Their Reduction to Nickel Films by Li, Zhefeng, Gordon, Roy G, Pallem, Venkateswara, Li, Huazhi, Shenai, Deo V

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Vapor Deposition of Highly Conformal Copper Seed Layers for Plating Through-Silicon Vias (TSVs) by Au, Yeung, Wang, Qing Min, Li, Huazhi, Lehn, Jean-Sebastien M., Shenai, Deo V., Gordon, Roy G.

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Chemical Vapor Deposition of Cobalt Nitride and its Application as an Adhesion-Enhancing Layer for Advanced Copper Interconnects by Bhandari, Harish B., Yang, Jing, Kim, Hoon, Lin, Youbo, Gordon, Roy G., Wang, Qing Min, Lehn, Jean-Sébastien M., Li, Huazhi, Shenai, Deo

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Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE by Shenai, Deo V., DiCarlo, Ronald L., Power, Michael B., Amamchyan, Artashes, Goyette, Randall J., Woelk, Egbert

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Formation of Nickel Silicide from Direct-Liquid-Injection Chemical-Vapor-Deposited Nickel Nitride Films by Li, Zhefeng, Gordon, Roy G., Li, Huazhi, Shenai, Deo V., Lavoie, Christian

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Correlation of vapor pressure equation and film properties with trimethylindium purity for the MOVPE grown III–V compounds by Shenai, Deo V., Timmons, Michael L., DiCarlo, Ronald L., Lemnah, Gregory K., Stennick, Robert S.

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GC/MS analyses of MOVPE precursors and characterization of impurities in trimethylindium, trimethylaluminum and bis(cyclopentadienyl)magnesium by Grant, William B., Amamchyan, Artashes, Stennick, Robert S., Shenai, Deo V.

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Effects of O 3 and H 2 O oxidants on C and N-related impurities in atomic-layer-deposited La 2 O 3 films observed by in situ x-ray photoelectron spectroscopy by Park, Tae Joo, Sivasubramani, Prasanna, Coss, Brian E., Kim, Hyun-Chul, Lee, Bongki, Wallace, Robert M., Kim, Jiyoung, Rousseau, Mike, Liu, Xinye, Li, Huazhi, Lehn, Jean-Sebastien, Hong, Daewon, Shenai, Deo

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Effects of O{sub 3} and H{sub 2}O oxidants on C and N-related impurities in atomic-layer-deposited La{sub 2}O{sub 3} films observed by in situ x-ray photoelectron spectroscopy by Park, Tae Joo, Sivasubramani, Prasanna, Coss, Brian E., Kim, Hyun-Chul, Lee, Bongki, Wallace, Robert M., Kim, Jiyoung, Rousseau, Mike, Liu Xinye, Li Huazhi, Lehn, Jean-Sebastien, Hong, Daewon, Shenai, Deo

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Effects of O3 and H2O oxidants on C and N-related impurities in atomic-layer-deposited La2O3 films observed by in situ x-ray photoelectron spectroscopy by Park, Tae Joo, Sivasubramani, Prasanna, Coss, Brian E., Kim, Hyun-Chul, Lee, Bongki, Wallace, Robert M., Kim, Jiyoung, Rousseau, Mike, Liu, Xinye, Li, Huazhi, Lehn, Jean-Sebastien, Hong, Daewon, Shenai, Deo

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Comparison of ALD of HfO2, SiO2, and HfSiOx Thin Films Using Various Metal/Silicon Alkylamide Precursors and O3 by Bartholomew, Lawrence, Barelli, Carl, Owyang, Jon, DiCarlo, Ron, Shenai, Deo, Marsman, Charles, Senzaki, Yoshi

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Development of Novel Germanium Compounds for Use in SiGe Epitaxy by Shenai, Deo, DiCarlo, Ron, Power, Mike, Amamchyan, Art, Goyette, Randy, Woelk, Egbert, Sagnes, Isabel

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The Deposition of Polycrystalline SiGe with Different Ge Precursors by Shi, Xiaoping, Schaekers, Marc, Leys, Frederik, Loo, Roger, Caymax, Matty R., Brus, Stephan, Zhao, Chao, Lamare, Bruno, Woelk, Egbert, Shenai, Deo

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Atomic Layer Deposition of Lanthanum-Based Ternary Oxides by Wang, Hongtao, Wang, Jun-Jieh, Gordon, Roy, Lehn, Jean-Sébastien M., Li, Huazhi, Hong, Daewon, Shenai, Deo V.

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Reduction of Residual C and N-Related Impurities by Al2O3 Insertion in Atomic-Layer-Deposited La2O3 Thin Films by Joo Park, Tae, Sivasubramani, Prasanna, Coss, Brian E., Lee, Bongki, Wallace, Robert M., Kim, Jiyoung, Rousseau, Mike, Liu, Xinye, Li, Huazhi, Lehn, Jean-Sebastien, Hong, Daewon, Shenai, Deo

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Ge Precursors for Strained Si and Compound Semiconductors by Woelk, Eghert, Shenai, Deo, Storck, Peter, Sagnes, Isabelle

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