Search Results - Sheptun, V.L.

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    The influence of radical-anion electron density distribution on the dissociation efficiency of a bound electron-hole pair in carbazole-containing semiconductors

    The influence of radical-anion electron density distribution on the dissociation efficiency of a bound electron-hole pair in carbazole-containing semiconductors by Kuvshinsky, N.G., Davidenko, N.A., Reshetnyak, V.V., Savransky, L.I., Sheptun, V.L.

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