50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO/sub 2/ and Al/sub 2/O/sub 3/ gate dielectrics by Hergenrother, J.M., Wilk, G.D., Nigam, T., Klemens, F.P., Monroe, D., Silverman, P.J., Sorsch, T.W., Busch, B., Green, M.L., Baker, M.R., Boone, T., Bude, M.K., Ciampa, N.A., Ferry, E.J., Fiory, A.T., Hillenius, S.J., Jacobson, D.C., Johnson, R.W., Kalavade, P., Keller, R.C., King, C.A., Kornblit, A., Krautter, H.W., Lee, J.T.-C., Mansfield, W.M., Miner, J.F., Morris, M.D., Oh, S.-H., Rosamilia, J.M., Sapjeta, B.J., Short, K., Steiner, K., Muller, D.A., Voyles, P.M., Grazul, J.L., Shero, E.J., Givens, M.E., Pomarede, C., Mazanec, M., Werkhoven, C.

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