Mechanisms of Hot-Carrier-Induced Threshold-Voltage Shift in High-Voltage p-Type LDMOS Transistors by Chen, J.F., Kuen-Shiuan Tian, Shiang-Yu Chen, Kuo-Ming Wu, Shih, J.R., Wu, K.

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Convergence of Hot-Carrier-Induced Saturation Region Drain Current and On-Resistance Degradation in Drain Extended MOS Transistors by Chen, J.F., Shiang-Yu Chen, Kuo-Ming Wu, Shih, J.R., Kenneth Wu

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The direct evidence of substrate potential propagation in a gate-grounded NMOS by Yang, Dao-Hong, Chen, Jone F., Wu, Kuo-Ming, Shih, J.R., Lee, Jian-Hsing

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A Novel 2-Bit/Cell p-Channel Logic Programmable Cell With Pure 90-nm CMOS Technology by Ying-Je Chen, Chia-En Huang, Hsin-Ming Chen, Han-Chao Lai, Shih, J.R., Wu, K., Ya-Chin King, Chrong-Jung Lin

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Self-heating effect in FinFETs and its impact on devices reliability characterization by Liu, S. E., Wang, J. S., Lu, Y. R., Huang, D. S., Huang, C. F., Hsieh, W. H., Lee, J. H., Tsai, Y. S., Shih, J. R., Lee, Y.-H, Wu, K.

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Hydrogenation properties of a nonbreakable electrode made of ZrMn0.6V0.2Co0.1Ni1.2 and Ag by SHIH, R.-J, SU, Y. Oliver, PERNG, T.-P

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Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors by Wu, K. M., Chen, J. F., Su, Y. K., Lee, J. R., Lin, K. W., Shih, J. R., Hsu, S. L.

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Self-supported electrodes made of LaNi4.25Al0.15Co0.5V0.1 and Ag or Ni for hydrogenation by SHIH, R.-J, SU, Y. Oliver, PERNG, T.-P

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A junction leakage mechanism and its effects on advance SRAM failure by Maji, D., Liao, P. J., Lee, Y.-H, Shih, J. R., Chen, S. C., Gao, S. H., Lee, J. H., Wu, K.

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Prediction of NBTI degradation for circuit under AC operation by Tsai, Y S, Jha, N K, Lee, Y.-H, Ranjan, R, Wang, W, Shih, J R, Chen, M J, Lee, J H, Wu, K

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Re-investigation of gate oxide breakdown on logic circuit reliability by Huang, Y C, Yew, T Y, Wang, W, Lee, Y.-H, Ranjan, R, Jha, N K, Liao, P J, Shih, J R, Wu, K

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Low-side driver's failure mechanism in a class-D amplifier under short circuit test and a robust driver device by Jian-Hsing Lee, Shih, J R, Tong-Chern Ong, Wu, Kenneth

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Investigation of monotonous increase in saturation-region drain current during hot carrier stress in N-type Lateral Diffused MOSFET with STI by Yu-Hui Huang, Shih, J R, Lee, Y H, Hsieh, S, Liu, C C, Wu, K, Chou, H L

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Investigation of multistage linear region drain current degradation and gate-oxide breakdown under hot-carrier stress in BCD HV PMOS by Yu-Hui Huang, Shih, J R, Liu, C C, Lee, Y, Ranjan, R, Puo-Yu Chiang, Dah-Chuen Ho, Wu, K

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A new ESD model induced yield loss during chip-on-film package process and it's failure mechanism by Jian-Hsing Lee, Shih, J R, Yu-Hui Huang, Lin, C P, Su, D, Wu, K

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Novel ESD protection structure with embedded SCR LDMOS for smart power technology by Jian-Hsing Lee, Shih, J.R., Tang, C.S., Liu, K.C., Wu, Y.H., Shiue, R.Y., Ong, T.C., Peng, Y.K., Yue, J.T.

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SILC degradation model to predict area scaling for gate dielectric breakdown in advanced technologies by Chang, S. W., Joshi, K., Liao, P. J., Shih, J. R., Lee, Y.-H

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Study of junction degradation and lifetime assessment in FinFETs by Liao, P. J., Ho, T. Y., Joshi, K., Shih, J. R., Lee, Y.-H

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A fast reliability screening technique for identification of trap generation by Joshi, K., Xiao, Z. R., Gao, S. H., Huang, C., Shen, T. M., Liao, P. J., Lee, Y.-H, Shih, J. R.

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Time dependent junction degradation in FinFET by Ho, T. Y., Joshi, K., Lee, K. H., Liao, P. J., Shih, J. R., Lee, Y.-H

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