Search Results - Shimozuma, Mitsuo

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  1. 1
    Optical emission diagnostics of H2+CH4 50-Hz-13.56-MHz plasmas for chemical vapor deposition

    Optical emission diagnostics of H2+CH4 50-Hz-13.56-MHz plasmas for chemical vapor deposition by SHIMOZUMA, M, TOCHITANI, G, TAGASHIRA, H

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  2. 2
    Ionization Coefficient in Gases under Nonuniform Electric Fields

    Ionization Coefficient in Gases under Nonuniform Electric Fields by Date, Hiroyuki, Ikuta, Nobuaki, Kondo, Keiichi, Satoh, Kohki, Shimozuma, Mitsuo, Tagashira, Hiroaki

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  3. 3
    Electrical Conductivity of TiO 2 Thin Film on Insulator Induced by Radiation Exposure

    Electrical Conductivity of TiO 2 Thin Film on Insulator Induced by Radiation Exposure by Date, Hiroyuki, Tomozawa, Hidemasa, Takamasa, Tomoji, Okamoto, Koji, Shimozuma, Mitsuo

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  4. 4
    Particle formation in SiOx film deposition by low frequency plasma enhanced chemical vapor deposition

    Particle formation in SiOx film deposition by low frequency plasma enhanced chemical vapor deposition by Yamaguchi, Tomoyo, Sakamoto, Naoshi, Shimozuma, Mitsuo, Yoshino, Masaki, Tagashira, Hiroaki

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  5. 5
    Properties of TiN Films on Heated Substrate Below 550°C by 50 Hz Plasma-Enhanced Chemical Vapor Deposition

    Properties of TiN Films on Heated Substrate Below 550°C by 50 Hz Plasma-Enhanced Chemical Vapor Deposition by Yoshino, Masaki, Shimozuma, Mitsuo, Date, Hiroyuki, Rodrigo, Adolfo, Tagashira, Hiroaki

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  6. 6
    SiO2/amorphous As/GaAs passivation systems prepared at room temperature by 50 Hz plasma-enhanced chemical-vapor deposition

    SiO2/amorphous As/GaAs passivation systems prepared at room temperature by 50 Hz plasma-enhanced chemical-vapor deposition by Hashizume, Tamotsu, Yoshino, Masaki, Shimozuma, Mitsuo

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  7. 7
    Stable passivation systems for GaAs prepared by room-temperature deposition of SiO2 films

    Stable passivation systems for GaAs prepared by room-temperature deposition of SiO2 films by HASHIZUME, T, YOSHINO, M, ISHIKAWA, M, SHIMOZUMA, M

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  8. 8
    Stable Passivation Systems for GaAs Prepared by Room-Temperature Deposition of SiO 2 Films

    Stable Passivation Systems for GaAs Prepared by Room-Temperature Deposition of SiO 2 Films by Hashizume, Tamotsu, Yoshino, Masaki, Ishikawa, Motohiro, Shimozuma, Mitsuo

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  9. 9
    Annealing behavior of HF-treated GaAs capped with SiO2 films prepared by 50-Hz plasma-assisted chemical vapor deposition

    Annealing behavior of HF-treated GaAs capped with SiO2 films prepared by 50-Hz plasma-assisted chemical vapor deposition by HASHIZUME, T, HASEGAWA, H, TOCHITANI, G, SHIMOZUMA, M

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  10. 10
    Annealing Behavior of HF-Treated GaAs Capped with SiO 2 Films Prepared by 50-Hz Plasma-Assisted Chemical Vapor Deposition

    Annealing Behavior of HF-Treated GaAs Capped with SiO 2 Films Prepared by 50-Hz Plasma-Assisted Chemical Vapor Deposition by Hashizume, Tamotsu, Hasegawa, Hideki, Tochitani, Gen, Shimozuma, Mitsuo

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  11. 11
    Annealing behavior of HF-treated GaAs capped with SiO sub(2) films prepared by 50-Hz plasma-assisted chemical vapor deposition

    Annealing behavior of HF-treated GaAs capped with SiO sub(2) films prepared by 50-Hz plasma-assisted chemical vapor deposition by Hashizume, Tamotsu, Hasegawa, Hideki, Tochitani, Gen, Shimozuma, Mitsuo

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  12. 12
    Experimental coupling efficiency of shaping mirrors matching a 168-GHz gyrotron output wave to the HE11 mode

    Experimental coupling efficiency of shaping mirrors matching a 168-GHz gyrotron output wave to the HE11 mode by Hirata, Yosuke, Komuro, Mitsuo, Mitsunaka, Yoshika, Hayashi, Kenichi, Sasaki, Satoshi, Kanai, Yoshiharu, Kubo, Shin, Shimozuma, Takashi, Sato, Motoyasu, Takita, Yasuyuki

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