Search Results - Shin, Somyeong

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  1. 1
    Robust graphene wet transfer process through low molecular weight polymethylmethacrylate

    Robust graphene wet transfer process through low molecular weight polymethylmethacrylate by Kim, Seonyeong, Shin, Somyeong, Kim, Taekwang, Du, Hyewon, Song, Minho, Lee, ChangWon, Kim, Kisoo, Cho, Seungmin, Seo, David H., Seo, Sunae

    Published in Carbon (New York)
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  2. 2
    The enhanced low resistance contacts and boosted mobility in two-dimensional p-type WSe2 transistors through Ar+ ion-beam generated surface defects

    The enhanced low resistance contacts and boosted mobility in two-dimensional p-type WSe2 transistors through Ar+ ion-beam generated surface defects by Kim, Dahye, Du, Hyewon, Kim, Taekwang, Shin, Somyeong, Kim, Seonyeong, Song, Minho, Lee, ChangWon, Lee, Jaeung, Cheong, Hyeonsik, Seo, David H., Seo, Sunae

    Published in AIP advances
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  3. 3
    Schottky barrier contrasts in single and bi-layer graphene contacts for MoS2 field-effect transistors

    Schottky barrier contrasts in single and bi-layer graphene contacts for MoS2 field-effect transistors by Du, Hyewon, Kim, Taekwang, Shin, Somyeong, Kim, Dahye, Kim, Hakseong, Sung, Ji Ho, Lee, Myoung Jae, Seo, David H., Lee, Sang Wook, Jo, Moon-Ho, Seo, Sunae

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  4. 4
    Electron doping and stability enhancement of doped graphene using a transparent polar dielectric film

    Electron doping and stability enhancement of doped graphene using a transparent polar dielectric film by Shin, Somyeong, Du, Hyewon, Kim, Taekwang, Kim, Seonyeong, Kim, Ki Soo, Cho, Seungmin, Lee, Chang-Won, Seo, Sunae

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  5. 5
    Gate-switchable rectification in isotype van der Waals heterostructure of multilayer MoTe2/SnS2 with large band offsets

    Gate-switchable rectification in isotype van der Waals heterostructure of multilayer MoTe2/SnS2 with large band offsets by Kim, Seonyeong, Du, Hyewon, Kim, Taekwang, Shin, Somyeong, Song, Hyeon-kyo, Kim, Hansung, Kang, Dain, Lee, Chang-Won, Seo, Sunae

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  6. 6
    Graphene transfer with self-doping by amorphous thermoplastic resins

    Graphene transfer with self-doping by amorphous thermoplastic resins by Shin, Somyeong, Kim, Seonyeong, Kim, Taekwang, Du, Hyewon, Kim, Ki Soo, Cho, Seungmin, Seo, Sunae

    Published in Carbon (New York)
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  7. 7
    A reliable and controllable graphene doping method compatible with current CMOS technology and the demonstration of its device applications

    A reliable and controllable graphene doping method compatible with current CMOS technology and the demonstration of its device applications by Kim, Seonyeong, Shin, Somyeong, Kim, Taekwang, Du, Hyewon, Song, Minho, Kim, Ki Soo, Cho, Seungmin, Lee, Sang Wook, Seo, Sunae

    Published in Nanotechnology
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  8. 8
    Facile fabrication for a stable interface in 2D materials/graphene van der Waals heterostructure

    Facile fabrication for a stable interface in 2D materials/graphene van der Waals heterostructure by Du, Hyewon, Kim, Seonyeong, Kim, Taekwang, Shin, Somyeong, Song, Hyeon-kyo, Kim, Hansung, Kang, Dain, Woo, Yun Sung, Seo, Sunae

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  9. 9
    Highly stable self-passivated MoO3-doped graphene film with nonvolatile MoOx layer

    Highly stable self-passivated MoO3-doped graphene film with nonvolatile MoOx layer by Shin, Somyeong, Kim, Seonyeong, Song, Hyeon-Kyo, Kim, Hansung, Kim, Taekwang, Du, Hyewon, Kang, Dain, Hwang, Jun Yeon, Woo, Yun Sung, Seo, Sunae

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  10. 10
    Highly stable self-passivated MoO3-doped graphene film with nonvolatile MoO layer

    Highly stable self-passivated MoO3-doped graphene film with nonvolatile MoO layer by Shin, Somyeong, Kim, Seonyeong, Song, Hyeon-Kyo, Kim, Hansung, Kim, Taekwang, Du, Hyewon, Kang, Dain, Hwang, Jun Yeon, Woo, Yun Sung, Seo, Sunae

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  11. 11
    Hot carrier degradation mechanism interpretation by lateral distribution of interface and bulk trap density

    Hot carrier degradation mechanism interpretation by lateral distribution of interface and bulk trap density by Chae, Heesoon, Shin, Somyeong, Choi, Jaehoon, Seo, Sunae

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  12. 12
    Schottky barrier contrasts in single and bi-layer graphene contacts for MoS{sub 2} field-effect transistors

    Schottky barrier contrasts in single and bi-layer graphene contacts for MoS{sub 2} field-effect transistors by Du, Hyewon, Kim, Taekwang, Shin, Somyeong, Kim, Dahye, Seo, Sunae, Kim, Hakseong, Lee, Sang Wook, Sung, Ji Ho, Jo, Moon-Ho, Division of Advanced Materials Science, Pohang University of Science and Technology, Lee, Myoung Jae, Seo, David H.

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