The MONET New Jersey network demonstration by Garrett, L.D., Derosier, R.M., Gnauck, A.H., McCormick, A.R., Tkach, R.W., Vodhanel, R.S., Chiao, J.-C., Gamelin, J., Gibbins, C.A., Shirokmann, H., Rauch, M., Young, J., Wagner, R.E., Luss, A., Maeda, M., Pastor, J., Post, M., Shen, C.-C., Wei, S.J., Wilson, B., Tsai, Y., Chang, G.-K., Patel, S.H., Allyn, C.L., Chraplyvy, A.R., Judkins, J., Srivastava, A.K., Sulhoff, J.W., Sun, Y., Vengsarkar, A.M., Wolf, C., Zyskind, J.L., Chester, A., Comissiong, B., Davis, G.W., Duverney, G., Jackman, N.A., Jozan, A., Nichols, V., Lee, B.H., Vora, R., Yorinks, A.F., Newsome, G., Bhattacharjya, P., Doherty, D., Ellson, J., Hunt, C., Rodriguez-Moral, A., Srinivasan, N.V., Kraeft, W., Ippolito, J.

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Regrowth of In0.53Ga04.7As/InP p-n heterojunctions by organometallic chemical vapor deposition by FREI, M. R, HAYES, J. R, SHIROKMANN, H. F, CANEAU, C

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A direct-current coupled, all-differential optical receiver for high-bit-rate SONET systems by Chang, G.-K., Liu, T.P., Gimlett, J.L., Shirokmann, H., Iqbal, M.Z., Hayes, J.R., Wang, K.C.

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A novel electronically switched four-channel receiver using InAlAs-InGaAs MSM-HEMT technology for wavelength-division-multiplexing by Chang, G.-K., Hong, W.P., Bhat, R., Nguyen, C.K., Shirokmann, H., Wang, L., Gimlett, J.L., Young, J., Lin, C., Hayes, J.R.

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Regrowth of In sub(0.53)Ga sub(0.47)As/InP p-n heterojunctions by organometallic chemical vapor deposition by Frei, M R, Hayes, J R, Shirokmann, H F, Caneau, C

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