Search Results - Shiue, R.Y.

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  1. 1
    Real case study for isothermal EM test as a process control methodology

    Real case study for isothermal EM test as a process control methodology by Shun-Yi Lee, Lai, J.B., Lee, S.C., Chu, L.H., Huang, Y.S., Shiue, R.Y., Peng, Y.K., Yue, J.T.

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  2. 2
    Novel ESD protection structure with embedded SCR LDMOS for smart power technology

    Novel ESD protection structure with embedded SCR LDMOS for smart power technology by Jian-Hsing Lee, Shih, J.R., Tang, C.S., Liu, K.C., Wu, Y.H., Shiue, R.Y., Ong, T.C., Peng, Y.K., Yue, J.T.

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  3. 3
    N-FET HCI reliability improvement by nitrogen interstitialization and its mechanism

    N-FET HCI reliability improvement by nitrogen interstitialization and its mechanism by Shih, J.R., Chiang, M.C., Lin, H.C., Shiue, R.Y., Yeng Peng, Yue, J.T.

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  4. 4
    Applying dynamic voltage stressing to reduce early failure rate

    Applying dynamic voltage stressing to reduce early failure rate by Chung-Yuan Tsao, Shiue, R.Y., Ting, C.C., Huang, Y.S., Lin, Y.C., Yue, J.T.

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  5. 5
    Analysis of new hot carrier degradation phenomena: 'W' or 'S' shape evolution of LDD NMOSFET

    Analysis of new hot carrier degradation phenomena: 'W' or 'S' shape evolution of LDD NMOSFET by Shih, J.R., Chu, J.H., Lee, J.H., Shiue, R.Y., Peng, Y.K., Yue, J.T.

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  6. 6
    Soft breakdown model of 20 /spl Aring/ gate oxide

    Soft breakdown model of 20 /spl Aring/ gate oxide by Chin-Yuan Ko, Shiue, R.Y., Yue, J.

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  7. 7
    Isothermal wafer-level electromigration test for the characterization of metal system reliability monitoring

    Isothermal wafer-level electromigration test for the characterization of metal system reliability monitoring by Kuo, C.K., Yuan, H.C., Lee, S.C., Lee, S.Y., Chu, L.H., Shiue, R.Y., Yue, J.T.

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  8. 8
    Instability trade-off of inter-layer or inter-metal dielectrics formation with low-k dielectrics on active and field device's characteristics

    Instability trade-off of inter-layer or inter-metal dielectrics formation with low-k dielectrics on active and field device's characteristics by Chen, M.J., Shih, J.R., Yu, K.F., Hsieh, C.C., Sung, W.L., Lin, F.S., Chu, L.H., Shiue, R.Y., Peng, Y.K., Yue, J.T.

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  9. 9
    A highly manufacturable 0.25 /spl mu/m multiple-Vt dual gate oxide CMOS process for logic/embedded IC foundry technology

    A highly manufacturable 0.25 /spl mu/m multiple-Vt dual gate oxide CMOS process for logic/embedded IC foundry technology by Chang, M.H., Ting, J.K., Shy, J.S., Chen, L., Liu, C.W., Wu, J.Y., Pan, K.H., Hou, C.S., Tu, C.C., Chen, Y.H., Sue, S.L., Jang, S.M., Yang, S.C., Tsai, C.S., Chen, C.H., Tao, H.J., Tsai, C.C., Hsieh, H.C., Wang, Y.Y., Chang, R.Y., Cheng, K.B., Chu, T.Y., Yen, T.N., Wang, P.S., Weng, J.W., Hsu, J.H., Ho, Y.S., Ho, C.H., Huang, Y.C., Shiue, R.Y., Liew, B.K., Yu, C.H., Sun, S.C., Sun, J.Y.C.

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