A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology by Cernea, R.-A., Long Pham, Moogat, F., Siu Chan, Binh Le, Yan Li, Shouchang Tsao, Tai-Yuan Tseng, Khanh Nguyen, Li, J., Jayson Hu, Jong Hak Yuh, Hsu, C., Fanglin Zhang, Kamei, T., Nasu, H., Kliza, P., Khin Htoo, Lutze, J., Yingda Dong, Higashitani, M., Junnhui Yang, Hung-Szu Lin, Sakhamuri, V., Li, A., Feng Pan, Yadala, S., Taigor, S., Pradhan, K., Lan, J., James Chan, Abe, T., Fukuda, Y., Mukai, H., Kawakami, K., Liang, C., Ip, T., Shu-Fen Chang, Lakshmipathi, J., Huynh, S., Pantelakis, D., Mofidi, M., Quader, K.

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A 56-nm CMOS 99- }^ 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput by Takeuchi, K., Kameda, Y., Fujimura, S., Otake, H., Hosono, K., Shiga, H., Watanabe, Y., Futatsuyama, T., Shindo, Y., Kojima, M., Iwai, M., Shirakawa, M., Ichige, M., Hatakeyama, K., Tanaka, S., Kamei, T., Jia-Yi Fu, Cernea, A., Yan Li, Higashitani, M., Hemink, G., Sato, S., Oowada, K., Shih-Chung Lee, Hayashida, N., Jun Wan, Lutze, J., Shouchang Tsao, Mofidi, M., Sakurai, K., Tokiwa, N., Waki, H., Nozawa, Y., Kanazawa, K., Ohshima, S.

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A 34MB/s-Program-Throughput 16Gb MLC NAND with All-Bitline Architecture in 56nm by Cernea, Raul, Pham, Long, Moogat, Farookh, Chan, Siu, Le, Binh, Li, Yan, Tsao, Shouchang, Tseng, Tai-Yuan, Nguyen, Khanh, Li, Jason, Hu, Jayson, Park, Jong, Hsu, Cynthia, Zhang, Fanglin, Kamei, Teruhiko, Nasu, Hiroaki, Kliza, Phil, Htoo, Khin, Lutze, Jeffrey, Dong, Yingda, Higashitani, Masaaki, Yang, Junhui, Lin, Hung-Szu, Sakhamuri, Vamshi, Li, Alan, Pan, Feng, Yadala, Sridhar, Taigor, Subodh, Pradhan, Kishan, Lan, James, Chan, James, Abe, Takumi, Fukuda, Yasuyuki, Mukai, Hideo, Kawakami, Koichi, Liang, Connie, Ip, Tommy, Chang, Shu-Fen, Lakshmipathi, Jaggi, Huynh, Sharon, Pantelakis, Dimitris, Mofidi, Mehrdad, Quader, Khandker

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A 56-nm CMOS 99-mm2 8-Gb multi-level NAND flash memory with 10-MB/s program throughput by TAKEUCHI, Ken, KAMEDA, Yasushi, IWAI, Makoto, SHIRAKAWA, Masanobu, ICHIGE, Masayuki, HATAKEYAMA, Kazuo, TANAKA, Shinichi, KAMEI, Teruhiko, FU, Jia-Yi, CEMEA, Adi, YAN LI, HIGASHITAM, Masaaki, FUJIMURA, Susumu, HEMINK, Gertjan, SATO, Shinji, OOWADA, Ken, LEE, Shih-Chung, HAYASHIDA, Naoki, JUN WAN, LUTZE, Jeffrey, TSAO, Shouchang, MOFIDI, Mehrdad, SAKURAI, Kiyofumi, OTAKE, Hiroyuki, TOKIWA, Naoya, WAKI, Hiroko, NOZAWA, Yasumitsu, KANAZAWA, Kazuhisa, OHSHIMA, Shigeo, HOSONO, Koji, SHIGA, Hitoshi, WATANABE, Yoshihisa, FUTATSUYAMA, Takuya, SHINDO, Yoshihiko, KOJIMA, Masatsugu

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A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput by Takeuchi, K., Kameda, Y., Fujimura, S., Otake, H., Hosono, K., Shiga, H., Watanabe, Y., Futatsuyama, T., Shindo, Y., Kojima, M., Iwai, M., Shirakawa, M., Ichige, M., Hatakeyama, K., Tanaka, S., Kamei, T., Jia-Yi Fu, Cernea, A., Yan Li, Higashitani, M., Hemink, G., Sato, S., Oowada, K., Shih-Chung Lee, Hayashida, N., Jun Wan, Lutze, J., Shouchang Tsao, Mofidi, M., Sakurai, K., Tokiwa, N., Waki, H., Nozawa, Y., Kanazawa, K., Ohshima, S.

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