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Effect of Asymmetric Channel on Charging Behavior of 22-nm Quantum-Dot Floating-Gate Flash Memory Cell
by
Shrirao, Ashwini
,
Gautam, Rashmi
,
Patrikar, Rajendra M.
Published in
IEEE transactions on electron devices
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Ieee Transactions On Electron Devices
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22-Nm Technology
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Applied Sciences
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Asymmetric Channel
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Cross-Disciplinary Physics: Materials Science; Rheology
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Design. Technologies. Operation Analysis. Testing
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Doping
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Electronics
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Engineering
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Engineering, Electrical & Electronic
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Exact Sciences And Technology
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Flash Memory Cell
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Flash Memory Cells
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Integrated Circuits
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Integrated Circuits By Function
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Logic Gates
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Magnetic And Optical Mass Memories
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Materials Science
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Nanoscale Materials And Structures: Fabrication And Characterization
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Physical Sciences
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Physics
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