High-Power 2 \mu Diode Lasers With Asymmetric Waveguide by Jianfeng Chen, Kipshidze, G, Shterengas, L

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Effect of Quantum Well Compressive Strain Above 1% On Differential Gain and Threshold Current Density in Type-I GaSb-Based Diode Lasers by Jianfeng Chen, Donetsky, D., Shterengas, L., Kisin, M.V., Kipshidze, G., Belenky, G.

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The Nature of Auger Recombination in Type-I Quantum Well Lasers Operating in the Near- and Mid-Infrared by Eales, Timothy, Marko, Igor P., Ikyo, Barnabas A., Adams, Alf R., Andrejew, Alexander, Vizbaras, Kristijonas, Amann, Markus-C., Shterengas, Leon, Sweeney, Stephen J.

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GaSb-Based Mid-Infrared Single Lateral Mode Lasers Fabricated by Selective Wet Etching Technique with an Etch Stop Layer by Jung, Seungyong, Kipshidze, Gela, Liang, Rui, Suchalkin, Sergey, Shterengas, Leon, Belenky, Gregory

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The 3.0―3.2 μm wavelength range narrow ridge waveguide Sb-based semiconductor diode lasers operating up to 333 K by SOIBEL, Alex, FREZ, Cliff, KSENDZOV, Alexander, KEO, Sam, FOROUHAR, Siamak, TSVID, Gene, KIPSHIDZE, Gela, SHTERENGAS, Leon, BELENKY, Gregory

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Conduction- and Valence-Band Energies in Bulk InAs^sub 1â 'x^Sb^sub x^ and Type II InAs^sub 1â 'x^Sb^sub x^/InAs Strained-Layer Superlattices by Lin, Youxi, Wang, Ding, Donetsky, Dmitry, Shterengas, Leon, Kipshidze, Gela, Belenky, Gregory, Svensson, Stefan P, Sarney, Wendy L, Hier, Harry S

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The 3.0–3.2 µm wavelength range narrow ridge waveguide Sb-based semiconductor diode lasers operating up to 333 K by Soibel, Alex, Frez, Cliff, Ksendzov, Alexander, Keo, Sam, Forouhar, Siamak, Tsvid, Gene, Kipshidze, Gela, Shterengas, Leon, Belenky, Gregory

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Effect of Auger recombination on non-equilibrium charge carrier concentration in InGaAsSb/AlGaAsSb quantum wells by Vinnichenko, Maxim Ya, Makhov, Ivan S., Selivanov, Anatoliy V., Sorokina, Anastasiya M., Vorobjev, Leonid E., Firsov, Dmitry A., Shterengas, Leon, Belenky, Gregory

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GaSb based light emitting diodes with strained InGaAsSb type Iquantum well active regions by Suchalkin, Sergey, Jung, Seungyong, Kipshidze, Gela, Shterengas, Leon, Hosoda, Takashi, Westerfeld, David, Snyder, Donald, Belenky, Gregory

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Advances in Type-I GaSb Based Lasers by Belenky, Gregory, Shterengas, Leon, Donetsky, Dmitry, Kisin, Mikhail, Kipshidze, Gela

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Diffraction limited 3.15 μm cascade diode lasers by Rui Liang, Shterengas, Leon, Hosoda, Takashi, Stein, Aaron, Ming Lu, Kipshidze, Gela, Belenky, Gregory

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Generation of entangled photons via parametric down-conversion in semiconductor lasers and integrated quantum photonic systems by Tokman, Mikhail, Wang, Yongrui, Chen, Qianfan, Shterengas, Leon, Belyanin, Alexey

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3 μm GaSb-based type-i quantum-well diode lasers with cascade pumping scheme by Rui Liang, Hosoda, Takashi, Kipshidze, Gela, Shterengas, Leon, Belenky, Gregory

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Engineering Dirac Materials: Metamorphic InAs1–x Sb x /InAs1–y Sb y Superlattices with Ultralow Bandgap by Suchalkin, Sergey, Belenky, Gregory, Ermolaev, Maksim, Moon, Seongphill, Jiang, Yuxuan, Graf, David, Smirnov, Dmitry, Laikhtman, Boris, Shterengas, Leon, Kipshidze, Gela, Svensson, Stefan P, Sarney, Wendy L

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Measurements of α-factor in 2–2.5 μm type-I In(Al)GaAsSb/GaSb high power diode lasers by Shterengas, L., Belenky, G. L., Gourevitch, A., Kim, J. G., Martinelli, R. U.

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The effect of Auger recombination on the nonequilibrium carrier recombination rate in the InGaAsSb/AlGaAsSb quantum wells by Vinnichenko, Maxim, Makhov, Ivan, Balagula, Roman, Firsov, Dmitry, Vorobjev, Leonid, Shterengas, Leon, Belenky, Gregory

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GaSb-based high-power single-spatial-mode lasers at 2.0 μm by Franz, Kale J., Frez, Clifford, Jianfeng Chen, Yueming Qiu, Freilich, Daniel V., Shterengas, Leon, Belenky, Gregory L., Forouhar, Siamak

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Microscopic simulation of the temperature dependence of static and dynamic 1.3-μm multi-quantum-well laser performance by WITZIGMANN, Bernd, HYBERTSEN, Mark S, REYNOLDS, C. Lewis, BELENKY, Gregory L, SHTERENGAS, Leon, SHTENGEL, Gleb E

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Holmium Doped Solid State Laser Resonantly Pumped and Q-Switched by Novel GaSb-Based Photonic Devices by Shterengas, Leon

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Direct measurement of lateral carrier leakage in 1.3-μm InGaAsP multiple-quantum-well capped mesa buried heterostructure lasers by BELENKY, Gregory, SHTERENGAS, Leon, REYNOLDS, C. Lewis, FOCHT, Marlin W, HYBERTSEN, Mark S, WITZIGMANN, Bernd

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