13.7 A 1Tb Density 3b/Cell 3D-NAND Flash on a 2YY-Tier Technology with a 300MB/s Write Throughput by Kawai, Koichi, Einaga, Yuichi, Oikawa, Yoko, He, Yankang, Iorio, Biagio, Yamada, Shigekazu, Kamata, Yoshihiko, Iwasaki, Tomoko, D'Alessandro, Andrea, Yu, Erwin, Muralidharan, Arvind, Li, Qinge, Nguyen, Henry, Chan, Kim-Fung, Piccardi, Michele, Ichikawa, Takaaki, Yu, Jeff, Wang, Guan, Kim, Kwangwon, Kim, Chulbum, Mangalindan, Paolo, Yun, Hojung, Nubile, Luca, Verma, Kapil, Bhushan, Sushanth, Srinivasan, Dheeraj, Kuge, Hidehiko, Subramanian, Rajesh, Kishimoto, Jiro, Kamijo, Toru, Musunuri, Padma, Siau, Chang, Ghodsi, Ramin

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A 130.7- \hbox^ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology by Tz-yi Liu, Tian Hong Yan, Scheuerlein, Roy, Yingchang Chen, Lee, Jeffrey KoonYee, Balakrishnan, Gopinath, Yee, Gordon, Zhang, Henry, Yap, Alex, Ouyang, Jingwen, Sasaki, Takahiko, Al-Shamma, Ali, Chen, Chinyu, Gupta, Mayank, Hilton, Greg, Kathuria, Achal, Lai, Vincent, Matsumoto, Masahide, Nigam, Anurag, Pai, Anil, Pakhale, Jayesh, Chang Hua Siau, Xiaoxia Wu, Yibo Yin, Nagel, Nicolas, Tanaka, Yoichiro, Higashitani, Masaaki, Minvielle, Tim, Gorla, Chandu, Tsukamoto, Takayuki, Yamaguchi, Takeshi, Okajima, Mutsumi, Okamura, Takayuki, Takase, Satoru, Inoue, Hirofumi, Fasoli, Luca

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13.5 A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology by Siau, Chang, Kim, Kwang-Ho, Lee, Seungpil, Isobe, Katsuaki, Shibata, Noboru, Verma, Kapil, Ariki, Takuya, Li, Jason, Yuh, Jong, Amarnath, Anirudh, Nguyen, Qui, Kwon, Ohwon, Jeong, Stanley, Li, Heguang, Hsu, Hua-Ling, Tseng, Tai-yuan, Choi, Steve, Darne, Siddhesh, Anantula, Pradeep, Yap, Alex, Chibvongodze, Hardwell, Miwa, Hitoshi, Yamashita, Minoru, Watanabe, Mitsuyuki, Hayashi, Koichiro, Kato, Yosuke, Miwa, Toru, Kang, Jang Yong, Okumura, Masatoshi, Ookuma, Naoki, Balaga, Muralikrishna, Ramachandra, Venky, Matsuda, Aki, Kulkani, Swaroop, Rachineni, Raghavendra, Manjunath, Pai K., Takehara, Masahito, Pai, Anil, Rajendra, Srinivas, Hisada, Toshiki, Fukuda, Ryo, Tokiwa, Naoya, Kawaguchi, Kazuaki, Yamaoka, Masashi, Komai, Hiromitsu, Minamoto, Takatoshi, Unno, Masaki, Ozawa, Susumu, Nakamura, Hiroshi, Hishida, Tomoo, Kajitani, Yasuyuki, Lin, Lei

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Low power cross-point memory architecture by Bateman, B., Chang Siau, Chevallier, C.

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11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology by Yamashita, Ryuji, Magia, Sagar, Higuchi, Tsutomu, Yoneya, Kazuhide, Yamamura, Toshio, Mizukoshi, Hiroyuki, Zaitsu, Shingo, Yamashita, Minoru, Toyama, Shunichi, Kamae, Norihiro, Lee, Juan, Shuo Chen, Jiawei Tao, Mak, William, Xiaohua Zhang, Ying Yu, Utsunomiya, Yuko, Kato, Yosuke, Sakai, Manabu, Matsumoto, Masahide, Chibvongodze, Hardwell, Ookuma, Naoki, Yabe, Hiroki, Taigor, Subodh, Samineni, Rangarao, Kodama, Takuyo, Kamata, Yoshihiko, Namai, Yuzuru, Huynh, Jonathan, Sung-En Wang, Yankang He, Trung Pham, Saraf, Vivek, Petkar, Akshay, Watanabe, Mitsuyuki, Hayashi, Koichiro, Swarnkar, Prashant, Miwa, Hitoshi, Pradhan, Aditya, Dey, Sulagna, Dwibedy, Debasish, Xavier, Thushara, Balaga, Muralikrishna, Agarwal, Samiksha, Kulkarni, Swaroop, Papasaheb, Zameer, Deora, Sahil, Hong, Patrick, Meiling Wei, Balakrishnan, Gopinath, Ariki, Takuya, Verma, Kapil, Chang Siau, Yingda Dong, Ching-Huang Lu, Miwa, Toru, Moogat, Farookh

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A 130.7mm2 2-layer 32Gb ReRAM memory device in 24nm technology by Tz-Yi Liu, Tian Hong Yan, Scheuerlein, R., Yingchang Chen, Lee, J. K., Balakrishnan, G., Yee, G., Zhang, H., Yap, A., Ouyang, J., Sasaki, T., Addepalli, S., Al-Shamma, Ali, Chin-Yu Chen, Gupta, M., Hilton, G., Joshi, S., Kathuria, A., Lai, V., Masiwal, D., Matsumoto, M., Nigam, A., Pai, A., Pakhale, J., Chang Hua Siau, Xiaoxia Wu, Yin, R., Liping Peng, Jang Yong Kang, Huynh, S., Huijuan Wang, Nagel, N., Tanaka, Y., Higashitani, M., Minvielle, T., Gorla, C., Tsukamoto, T., Yamaguchi, T., Okajima, M., Okamura, T., Takase, S., Hara, T., Inoue, H., Fasoli, L., Mofidi, M., Shrivastava, R., Quader, K.

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A 0.13µm 64Mb multi-layered conductive metal-oxide memory by Chevallier, C.J., Chang Hua Siau, Lim, S.F., Namala, S.R., Matsuoka, M., Bateman, B.L., Rinerson, D.

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Kinematic analysis of seismic slope stability with discretisation technique and pseudo-dynamic approach: a new perspective by Qin, Chang-Bing, Chian, Siau Chen, Gazetas, George

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Regional citrate anti-coagulation dose titration: impact on dose of continuous renal replacement therapy by Ng, Charles Jun Han, Poh, Cheng Boon, Koduri, Sreekanth, Roy, Debajyoti Malakar, Siau, Chuin, Lim, Noelle Louise, Chionh, Chang Yin

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The landslide stage of the Hsiaolin catastrophe: Simulation and validation by Kuo, C. Y., Tai, Y. C., Chen, C. C., Chang, K. J., Siau, A. Y., Dong, J. J., Han, R. H., Shimamoto, T., Lee, C. T.

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Surgical treatment for total root avulsion type brachial plexus injuries by neurotization: A prospective comparison study between total and hemicontralateral C7 nerve root transfer by Tu, Yuan-Kun, Tsai, Yi-Jung, Chang, Chih-Han, Su, Fong-Chin, Hsiao, Chih-Kun, Tan, Jacqueline Siau-Woon

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Affiliate stigma and its association with quality of life among caregivers of relatives with mental illness in Singapore by Zhang, Yunjue, Subramaniam, Mythily, Lee, Siau Pheng, Abdin, Edimansyah, Sagayadevan, Vathsala, Jeyagurunathan, Anitha, Chang, Sherilyn, Shafie, Saleha Binte, Abdul Rahman, Restria Fauziana, Vaingankar, Janhavi Ajit, Chong, Siow Ann

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Regional Citrate Anticoagulation for Continuous Renal Replacement Therapy ‐ A Safe and Effective Low‐Dose Protocol by Poh, Cheng Boon, Tan, Poh Choo, Kam, Jia Wen, Siau, Chuin, Lim, Noelle L, Yeon, Wenxiang, Cui, Hai Hua, Ding, Hai Ting, Song, Xiao Ying, Yan, Peng, Chea, Kai Li, Liu, Jin Shu, Chionh, Chang Yin

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Immunogenicity and tolerability of an AS03 A-adjuvanted prepandemic influenza vaccine: A phase III study in a large population of Asian adults by Chu, Daniel Wai-Sing, Hwang, Shinn-Jang, Lim, Fong Seng, Oh, Helen May Lin, Thongcharoen, Prasert, Yang, Pan-Chyr, Bock, Hans L., Dramé, Mamadou, Gillard, Paul, Hutagalung, Yanee, Tang, Haiwen, Teoh, Yee Leong, Ballou, Ripley W.

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