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    New Photoresist Materials for 157-nm Lithography. Poly[Vinylsulfonyl Fluoride-c o-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)-styrene] Partially Protected with tert-Butoxycarbonyl

    New Photoresist Materials for 157-nm Lithography. Poly[Vinylsulfonyl Fluoride-c o-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)-styrene] Partially Protected with tert-Butoxycarbonyl by Fujigaya, Tsuyohiko, Sibasaki, Yuji, Ando, Shinji, Kishimura, Shinji, Endo, Masayoshi, Sasago, Masaru, Ueda, Mitsuru

    Published in Chemistry of materials
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