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Vertical GaN Transistor with Semi‐Insulating Channel
by
Šichman, Peter
,
Stoklas, Roman
,
Hasenöhrl, Stanislav
,
Gregušová, Dagmar
,
Ťapajna, Milan
,
Hudec, Boris
,
Haščík, Štefan
,
Hashizume, Tamotsu
,
Chvála, Aleš
,
Šatka, Alexander
,
Kuzmík, Ján
Published in
Physica status solidi. A, Applications and materials science
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Polarization‐Engineered n+GaN/InGaN/AlGaN/GaN Normally‐Off MOS HEMTs
by
Gregušová, Dagmar
,
Blaho, Michal
,
Haščík, Štefan
,
Šichman, Peter
,
Laurenčíková, Agáta
,
Seifertová, Alena
,
Dérer, Ján
,
Brunner, Frank
,
Würfl, Joachim
,
Kuzmík, Ján
Published in
Physica status solidi. A, Applications and materials science
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Analysis and Modeling of Vertical Current Conduction and Breakdown Mechanisms in Semi-Insulating GaN Grown on GaN: Role of Deep Levels
by
Stoklas, Roman
,
Chvala, Ales
,
Sichman, Peter
,
Hasenohrl, Stanislav
,
Hascik, Stefan
,
Priesol, Juraj
,
Satka, Alexander
,
Kuzmik, Jan
Published in
IEEE transactions on electron devices
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