Search Results - Sidko, O.

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  1. 1
    Experimental studies of cold electron attachment to SF6, CF3Br, and CCl2F2

    Experimental studies of cold electron attachment to SF6, CF3Br, and CCl2F2 by Le Garrec, J. L., Sidko, O., Queffelec, J. L., Hamon, S., Mitchell, J. B. A., Rowe, B. R.

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  2. 2
    The dissociative recombination of KrH+ and XeH

    The dissociative recombination of KrH+ and XeH by Le Padellec, A., Laubé, Sylvain, Sidko, Oleg, Rebrion-Rowe, Christiane, Rowe, Bertrand, Sarpal, B., Mitchell, J.B.A.

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  3. 3
    New FALP-MS measurements of , and dissociative recombination

    New FALP-MS measurements of , and dissociative recombination by Laubé, S, Padellec, A Le, Sidko, O, Rebrion-Rowe, C, Mitchell, J B A, Rowe, B R

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  4. 4
    The dissociative recombination of and

    The dissociative recombination of and by Padellec, A Le, Laubé, S, Sidko, O, Rebrion-Rowe, C, Rowe, B R, Sarpal, B, Mitchell, J B A

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  5. 5
    Modeling of dislocation dynamics in germanium Czochralski growth

    Modeling of dislocation dynamics in germanium Czochralski growth by Artemyev, V.V., Smirnov, A.D., Kalaev, V.V., Mamedov, V.M., Sidko, A.P., Podkopaev, O.I., Kravtsova, E.D., Shimansky, A.F.

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  6. 6
    Age-Dependent Approach to Search for Genetic Variants Associated with Myocardial Infarction

    Age-Dependent Approach to Search for Genetic Variants Associated with Myocardial Infarction by Osmak, G. J., Sidko, A. R., Kiselev, I. S., Favorova, O. O.

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  7. 7
    Multiphysical simulation analysis of the dislocation structure in germanium single crystals

    Multiphysical simulation analysis of the dislocation structure in germanium single crystals by Podkopaev, O. I., Artemyev, V. V., Smirnov, A. D., Mamedov, V. M., Sid’ko, A. P., Kalaev, V. V., Kravtsova, E. D., Shimanskii, A. F.

    Published in Technical physics
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  8. 8
    Comparison of silicon epitaxial growth on the 200- and 300-mm wafers from trichlorosilane in Centura reactors

    Comparison of silicon epitaxial growth on the 200- and 300-mm wafers from trichlorosilane in Centura reactors by Segal, A.S., Galyukov, A.O., Kondratyev, A.V., Sid’ko, A.P., Karpov, S.Yu, Makarov, Yu.N., Siebert, W., Storck, P.

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  9. 9
    Comparison of silicon epitaxial growth on the 200- and 300-mm wafers from trichlorosilane in Centura reactors

    Comparison of silicon epitaxial growth on the 200- and 300-mm wafers from trichlorosilane in Centura reactors by SEGAL, A. S, GALYUKOV, A. O, KONDRATYEV, A. V, SID'KO, A. P, KARPOV, S. Yu, MAKAROV, Yu. N, SIEBERT, W, STORCK, P

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