Search Results - Simburger, Werner

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  1. 1
    Analysis of ESD Behavior of Stacked nMOSFET RF Switches in Bulk Technology

    Analysis of ESD Behavior of Stacked nMOSFET RF Switches in Bulk Technology by Rigato, Matteo, Fleury, Clement, Schwarz, Benedikt, Mergens, Markus, Bychikhin, Sergey, Simburger, Werner, Pogany, Dionyz

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  2. 2
    An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology

    An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology by Trotta, S., Knapp, H., Aufinger, K., Meister, T.F., Bock, J., Dehlink, B., Simburger, W., Scholtz, A.L.

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  3. 3
    Low-noise ESD-protected 24 GHz receiver for radar applications in SiGe:C technology

    Low-noise ESD-protected 24 GHz receiver for radar applications in SiGe:C technology by Issakov, V., Knapp, H., Magrini, F., Thiede, A., Simburger, W., Maurer, L.

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  4. 4
    Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistors

    Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistors by Fleury, Clément, Simbürger, Werner, Pogany, Dionyz

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  5. 5
    A 1 V 51 GHz fully-integrated VCO in 0.12 mu m CMOS

    A 1 V 51 GHz fully-integrated VCO in 0.12 mu m CMOS by Tiebout, Marc, Wohlmuth, Hans-Dieter, Simburger, Werner

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  6. 6
    A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar

    A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar by Trotta, Saverio, Knapp, Herbert, Dibra, Donald, Aufinger, Klaus, Meister, Thomas F., Bock, Josef, Simburger, Werner, Scholtz, Arpad L.

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  7. 7
    A 22-39 GHz Passive mixer in SiGe:C bipolar technology

    A 22-39 GHz Passive mixer in SiGe:C bipolar technology by Issakov, Vadim, Knapp, Herbert, Wojnowski, Maciej, Thiede, Andreas, Simburger, Werner

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  8. 8
    Lumped and distributed lattice-type LC-baluns

    Lumped and distributed lattice-type LC-baluns by Bakalski, W., Simburger, W., Knapp, H., Wohlmuth, H.-D., Scholtz, A.L.

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  9. 9
    Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology

    Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology by Trotta, Saverio, Dehlink, Bernhard, Knapp, Herbert, Aufinger, Klaus, Meister, Thomas F., Bock, Josef, Simburger, Werner, Scholtz, Arpad L.

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  10. 10
    ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique

    ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique by Rigato, Matteo, Fleury, Clément, Heer, Michael, Capriotti, Mattia, Simbürger, Werner, Pogany, Dionyz

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  11. 11
    On-wafer measurement of the reverse-recovery time of integrated diodes by Transmission-Line-Pulsing (TLP)

    On-wafer measurement of the reverse-recovery time of integrated diodes by Transmission-Line-Pulsing (TLP) by Sauter, Martin, Simbürger, Werner, Johnsson, David, Stecher, Matthias

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  12. 12
    A monolithic transformer coupled 5-W silicon power amplifier with 59% PAE at 0.9 GHz

    A monolithic transformer coupled 5-W silicon power amplifier with 59% PAE at 0.9 GHz by Simburger, W., Wohlmuth, H.-D., Weger, P., Heinz, A.

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  13. 13
    Powered system-level conductive TLP probing method for ESD/EMI hard fail and soft fail threshold evaluation

    Powered system-level conductive TLP probing method for ESD/EMI hard fail and soft fail threshold evaluation by Schwingshackl, Thomas, Orr, Benjamin, Willemen, Joost, Simburger, Werner, Gossner, Harald, Bosch, Wolfgang, Pommerenke, David

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  14. 14
    A fully integrated 5.3-GHz 2.4-V 0.3-W SiGe bipolar power amplifier with 50-/Omega/ output

    A fully integrated 5.3-GHz 2.4-V 0.3-W SiGe bipolar power amplifier with 50-/Omega/ output by Bakalski, W, Simburger, W, Thuringer, R, Vasylyev, A, Scholtz, A L

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  15. 15
    Voltage-controlled oscillators up to 98 GHz in SiGe bipolar technology

    Voltage-controlled oscillators up to 98 GHz in SiGe bipolar technology by Perndl, W., Knapp, H., Aufinger, K., Meister, T.F., Simburger, W., Scholtz, A.L.

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  16. 16
    A high quality factor bulk-CMOS switch-based digitally programmable RF capacitor

    A high quality factor bulk-CMOS switch-based digitally programmable RF capacitor by Thomas, Anthony, Bakalski, Winfried, Simburger, Werner, Weigel, Robert

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  17. 17
    Transient voltage suppressors—technologies and characteristics

    Transient voltage suppressors—technologies and characteristics by Simbürger, Werner, Willemen, Joost, Vendt, Vadim, Schwingshackl, Thomas, D’Arbonneau, Antoine

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  18. 18
    Rise-Time Filter Design for Transmission-Line Pulse Measurement Systems

    Rise-Time Filter Design for Transmission-Line Pulse Measurement Systems by Cao, Yiqun, Simburger, Werner, Johnsson, David

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  19. 19
    Modeling of monolithic lumped planar transformers up to 20 GHz

    Modeling of monolithic lumped planar transformers up to 20 GHz by Kehrer, D., Simburger, W., Wohlmuth, H.-D., Scholtz, A.L.

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  20. 20
    ESD-Protected 24 GHz LNA for Radar Applications in SiGe:C Technology

    ESD-Protected 24 GHz LNA for Radar Applications in SiGe:C Technology by Issakov, Vadim, Knapp, Herbert, Wojnowski, Maciej, Thiede, Andreas, Simburger, Werner, Haider, Gunter, Maurer, Linus

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