Search Results - Sionke, S.

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  1. 1
    Band offsets at interfaces of (100)InxGa1−xAs (0⩽x⩽0.53) with Al2O3 and HfO2

    Band offsets at interfaces of (100)InxGa1−xAs (0⩽x⩽0.53) with Al2O3 and HfO2 by Afanas’ev, V.V., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O’Mahony, A., Povey, I.M., Pemble, M.E., O’Connor, E., Hurley, P.K., Newcomb, S.B.

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  2. 2
    Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2

    Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2 by Afanas’ev, V. V., Badylevich, M., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O’Mahony, A., Povey, I. M., Pemble, M. E., O’Connor, E., Hurley, P. K., Newcomb, S. B.

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  3. 3
    Energy barriers at interfaces between (100) InxGa1−xAs (≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2

    Energy barriers at interfaces between (100) InxGa1−xAs (≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2 by Afanas’ev, V. V., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O’Mahony, A., Povey, I. M., Pemble, M. E., O’Connor, E., Hurley, P. K., Newcomb, S. B.

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  4. 4
    Energy barriers at interfaces between (100) In x Ga 1 − x As ( 0 ≤ x ≤ 0.53 ) and atomic-layer deposited Al 2 O 3 and HfO 2

    Energy barriers at interfaces between (100) In x Ga 1 − x As ( 0 ≤ x ≤ 0.53 ) and atomic-layer deposited Al 2 O 3 and HfO 2 by Afanas'ev, V. V., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O'Mahony, A., Povey, I. M., Pemble, M. E., O'Connor, E., Hurley, P. K., Newcomb, S. B.

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  5. 5
    Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al 2 O 3 and HfO 2

    Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al 2 O 3 and HfO 2 by Afanas'ev, V. V., Badylevich, M., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O'Mahony, A., Povey, I. M., Pemble, M. E., O'Connor, E., Hurley, P. K., Newcomb, S. B.

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  6. 6
    Band offsets at interfaces of (1 0 0)In@@i@@dx@@Ga@@d1-@@@i@@dx@@As (0 [less-than-or-equals, slant] @@ix@ [less-than-or-equals, slant] 0.53) with Al@@d2@O@@d3@ and HfO@@d2@

    Band offsets at interfaces of (1 0 0)In@@i@@dx@@Ga@@d1-@@@i@@dx@@As (0 [less-than-or-equals, slant] @@ix@ [less-than-or-equals, slant] 0.53) with Al@@d2@O@@d3@ and HfO@@d2@ by Afanas'ev, V V, Stesmans, A, Brammertz, G, Delabie, A, Sionke, S, O'Mahony, A, Povey, I M, Pemble, M E, O'Connor, E, Hurley, P K, Newcomb, S B

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  7. 7
    Band offsets at interfaces of (1 0 0)In x Ga 1− x As (0 ⩽ x ⩽ 0.53) with Al 2O 3 and HfO 2

    Band offsets at interfaces of (1 0 0)In x Ga 1− x As (0 ⩽ x ⩽ 0.53) with Al 2O 3 and HfO 2 by Afanas’ev, V.V., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O’Mahony, A., Povey, I.M., Pemble, M.E., O’Connor, E., Hurley, P.K., Newcomb, S.B.

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  8. 8
    Band offsets at interfaces of (1 00)lnxGa1-xAs (0 ≤ x ≤ 0.53) with Al2O3 and HfO2

    Band offsets at interfaces of (1 00)lnxGa1-xAs (0 ≤ x ≤ 0.53) with Al2O3 and HfO2 by AFANAS'EV, V. V, STESMANS, A, NEWCOMB, S. B, BRAMMERTZ, G, DELABIE, A, SIONKE, S, O'MAHONY, A, POVEY, I. M, PEMBLE, M. E, O'CONNO, E, HURLEY, P. K

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