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Near band-edge luminescence of semi-insulating undoped gallium arsenide at high levels of excitation
by
Kovalenko, V.F.
,
Shutov, S.V.
,
Baganov, Ye.A.
,
Smyikalo, M.M.
Published in
Journal of luminescence
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Journal Of Luminescence
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Condensed Matter: Electronic Structure, Electrical, Magnetic, And Optical Properties
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Electron-Hole Plasma
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Electron–Hole Plasma
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Exact Sciences And Technology
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High Level Of Excitation
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Iii-V Semiconductors
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Near Band-Edge Luminescence
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Optics
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Photoluminescence
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Physical Sciences
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Physics
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Science & Technology
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Semi-Insulating Undoped Gaas
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Sciencedirect
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Sciencedirect Freedom Collection
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Backfile Package - Materials Science [Yms]
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Backfile Package - Physics General (Legacy) [Ypa]
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