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Study of the semiconductor crystal surface; Structure rearrangement using heavy ion scattering technique
by
Molchanov, V.A.
,
Snisar, V.A.
Published in
Surface science
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Surface Science
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Angular Distribution
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Argon Ions/Effects On Silicon Surface At 10 To 30 Kev And 250 To 800-C
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N60100 -Physics -Atomic, Electron, Ion & Molecular Beams & Reactions
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