Creation and plasmon anisotropy spectroscopy of wedge-shaped gold nanoclusters conditioned by GaAs(001) surface by Berkovits, V.L., Kosobukin, V.A., Ulin, V.P., Alekseev, P.A., Borodin, B.R., Soldatenkov, F.Yu, Nashchekin, A.V., Khakhulin, S.A., Komkov, O.S.

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Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers by Sobolev, M. M., Soldatenkov, F. Yu

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Dissimilar gold nanoclusters at GaAs(0 0 1) surface: Formation chemistry, structure, and localized plasmons by Berkovits, V.L., Kosobukin, V.A., Ulin, V.P., Soldatenkov, F.Yu, Makarenko, I.V., Levitskii, V.S., Nashchekin, A.V., Alekseev, P.A.

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Study of deep levels in GaAs p–i–n structures by Sobolev, M. M., Soldatenkov, F. Yu, Kozlov, V. A.

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Gold nanoclusters on GaAs(001) surface: atomic force microscopy and optical spectroscopy of plasmons by Berkovits, V.L., Alekseev, P.A., Kosobukin, V.A., Ulin, V.P., Soldatenkov, F.Yu, Zgerskii, I.V.

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Porous silicon and its applications in biology and medicine by Ksenofontova, O. I., Vasin, A. V., Egorov, V. V., Bobyl’, A. V., Soldatenkov, F. Yu, Terukov, E. I., Ulin, V. P., Ulin, N. V., Kiselev, O. I.

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Surface of porous silicon under hydrophilization and hydrolytic degradation by Ulin, V. P., Ulin, N. V., Soldatenkov, F. Yu, Semenov, A. V., Bobyl, A. V.

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Temperature stability of contact systems for GaSb-based photovoltaic converters by Khvostikov, V. P., Sorokina, S. V., Potapovich, N. S., Soldatenkov, F. Yu, Timoshina, N. Kh

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Estimation of quality of GaAs substrates used for constructing semiconductor power devices by Shul’pina, I. L., Ratnikov, V. V., Kozlov, V. A., Soldatenkov, F. Yu, Voitovich, V. E.

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