On the mechanism of cross-hatch pattern formation in heterostructures with a small lattice mismatch by Kovalskiy, V.A., Eremenko, V.G., Vergeles, P.S., Soltanovich, O.A., Khodos, I.I., Dorokhin, M.V., Danilov, Yu.A.

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Analysis of the temperature dependence of the capacitance-voltage characteristics of InGaN/GaN multiple quantum well light-emitting structures by Soltanovich, O. A., Yakimov, E. B.

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Frequency and temperature dependences of capacitance-voltage characteristics of InGaN/GaN light-emitting structures with multiple quantum wells by Soltanovich, O. A., Shmidt, N. M., Yakimov, E. B.

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Gold and platinum profiles in fast power devices by Boström, O, Pichaud, B, Regula, M, Bajard, J.C, Blondiaux, G, Soltanovich, O.A, Yakimov, E.B, Lhorte, A, Quoirin, J.B

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One more deep level related to the metastable hydrogen-related defects in n-GaAs epilayers by Soltanovich, O.A., Yakimov, E.B., Erofeev, E.V., Kagadei, V.A., Weber, J.

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Correlation of diffusion length and trap concentration with dislocation density in MOCVD-grown GaN by Soltanovich, O.A., Yakimov, E.B., Shmidt, N.M., Usikov, A.S., Lundin, W.V.

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Annealing behavior of the system of metastable hydrogen-related defects M3/M4 in n-GaAs by Soltanovich, O.A., Yakimov, E.B., Kagadei, V.A., Romanenko, S.V.

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Study of depth distribution of metastable hydrogen-related defects in n-type GaAs by Soltanovich, O.A., Yakimov, E.B., Kagadei, V.A., Romas, L.M.

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