Asymmetric volatility connectedness between cryptocurrencies and energy: Dynamics and determinants by Wan, Yang, Song, Yuncheng, Zhang, Xinqian, Yin, Zhichao

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Self-assembled In0.5Ga0.5As quantum dots on GaP by Song, Yuncheng, Simmonds, Paul J., Lee, Minjoo Larry

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InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001) by Huang, Xue, Song, Yuncheng, Masuda, Taizo, Jung, Daehwan, Lee, Minjoo

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Bias-Induced Healing of V} Failures in Advanced SRAM Arrays by Mann, Randy W., McMahon, William, Randriamihaja, Yoann Mamy, Yuncheng Song, Kallianpur, Ajay Anand, Sheng Xie, Gautam, Akhilesh, Versaggi, Joseph, Parameshwaran, Biju, Weintraub, Chad E.

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Single NV zero-phonon line emission into waveguide-coupled GaP-on-diamond disk resonators by Gould, Michael, Thomas, Nicole K., Yuncheng Song, Lee, Minjoo Larry, Fu, Kai-Mei C.

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Incorporating Morphological Compostions with Transformer to Improve BERT by Song, Yuncheng, Song, Shuaifei, Ge, Juncheng, Zhang, Menghan, Yang, Wei

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InGaAs/GaP quantum dot light-emitting diodes on Si by Song, Yuncheng, Larry Lee, Minjoo

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Waveguide-integrated single-crystalline GaP resonators on diamond by Thomas, Nicole, Barbour, Russell J, Song, Yuncheng, Lee, Minjoo Larry, Fu, Kai-Mei C

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Room temperature electroluminescence from light-emitting diodes based on In0.5Ga0.5As/GaP self-assembled quantum dots by Song, Yuncheng, Larry Lee, Minjoo

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2.8 μm emission from type-I quantum wells grown on InAsxP1−x/InP metamorphic graded buffers by Jung, Daehwan, Song, Yuncheng, Yu, Lan, Wasserman, Daniel, Larry Lee, Minjoo

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Monte Carlo Simulation of Band-to-Band Tunneling in Silicon Devices by Xia, Zhiliang, Du, Gang, Song, Yuncheng, Wang, Jian, Liu, Xiaoyan, Kang, Jinfeng, Han, Ruqi

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2.8 {mu}m emission from type-I quantum wells grown on InAs{sub x}P{sub 1-x}/InP metamorphic graded buffers by Jung, Daehwan, Song, Yuncheng, Larry Lee, Minjoo, Yu Lan, Wasserman, Daniel

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Backside Power Distribution for Nanosheet Technologies Beyond 2nm by Xie, Ruilong, Hong, Wonhyuk, Zhang, Chen, Lee, Jongjin, Brew, Kevin, Johnson, Richard, Lanzillo, Nicholas, Shobha, Hosadurga, Kim, Taesun, Park, Panjae, Mochizuki, Shogo, Saraf, Iqbal, Park, Chanro, Zhuang, Lei, Osborn, Clifford, Li, Wai Kin, Liu, Feng, Sankarapandian, Muthumanickam, Yang, Chung Ju, Li, Juntao, Tierney, Lukas, Pujari, Ruturaj, Sulehria, Yasir, Song, Yuncheng, Zhou, Huimei, Wang, Miaomiao, Belyansky, Michael, Ghosh, Somnath, Zhang, Haojun, Motoyama, Koichi, Sarkar, Debarghya, Kim, Wukang, Chu, Albert, Li, Tao, Carta, Fabio, Gluschenkov, Oleg, Oh, Joongsuk, Malley, Matthew, Chu, Pinlei, Nguyen, Son, Luedders, Katherine, Lee, Joe, Khan, Shahrukh, Chowdhury, Prabudhya Roy, Huang, Huai, Shadman, Abir, Sieg, Stuart, Dechene, Daniel, Edelstein, Daniel, Arnold, John, Yamashita, Tenko, Choi, Kisik, Seo, Kang-ill, Guo, Dechao, Bu, Huiming

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Self-assembled In 0.5 Ga 0.5 As quantum dots on GaP by Song, Yuncheng, Simmonds, Paul J., Lee, Minjoo Larry

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2.8??m emission from type-I quantum wells grown on InAsxP1?x/InP metamorphic graded buffers by Jung, Daehwan, Song, Yuncheng, Yu, Lan, Wasserman, Daniel, Larry Lee, Minjoo

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Waveguiding in polycrystalline GaP grown on SiO2 by molecular beam deposition by Gould, Michael, Thomas, Nicole, Barbour, Russell, Song, Yuncheng, Lee, Minjoo Larry, Fu, Kai-Mei

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Self-Evolution Knowledge Distillation for LLM-based Machine Translation by Song, Yuncheng, Ding, Liang, Changtong Zan, Huang, Shujian

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3-D simulation of geometrical variations impact on nanoscale FinFETs by Shimeng Yu, Yuning Zhao, Yuncheng Song, Gang Du, Jinfeng Kang, Ruqi Han, Xiaoyan Liu

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Characteristics of sub-100nm ferroelectric field effect transistor with high-k buffer layer by Rui Jin, Yuncheng Song, Min Ji, Honghua Xu, Jinfeng Kang, Ruqi Han, Xiaoyan Liu

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Full 3-D simulation of gate line edge roughness impact on sub-30nm FinFETs by Shimeng Yu, Yuning Zhao, Yuncheng Song, Gang Du, Jinfeng Kang, Ruqi Han, Xiaoyan Liu

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