Search Results - Southwick, Richard

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  1. 1
    Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs

    Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs by Choudhury, Nilotpal, Samadder, Tarun, Tiwari, Ravi, Zhou, Huimei, Southwick, Richard G., Wang, Miaomiao, Mahapatra, Souvik

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  2. 2
    Observation of strong reflection of electron waves exiting a ballistic channel at low energy

    Observation of strong reflection of electron waves exiting a ballistic channel at low energy by Vaz, Canute I., Liu, Changze, Campbell, Jason P., Ryan, Jason T., Southwick, Richard G., Gundlach, David, Oates, Anthony S., Huang, Ru, Cheung, Kin. P.

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  3. 3
    On the Contribution of Bulk Defects on Charge Pumping Current

    On the Contribution of Bulk Defects on Charge Pumping Current by Ryan, J. T., Southwick, R. G., Campbell, J. P., Cheung, K. P., Suehle, J. S.

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  4. 4
    Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC-AC Experimental Conditions

    Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC-AC Experimental Conditions by Parihar, Narendra, Sharma, Uma, Southwick, Richard G., Wang, Miaomiao, Stathis, James H., Mahapatra, Souvik

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  5. 5
    Modeling of NBTI Kinetics in RMG Si and SiGe FinFETs, Part-I: DC Stress and Recovery

    Modeling of NBTI Kinetics in RMG Si and SiGe FinFETs, Part-I: DC Stress and Recovery by Parihar, Narendra, Southwick, Richard G., Wang, Miaomiao, Stathis, James H., Mahapatra, Souvik

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  6. 6
    Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics)

    Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics) by Wu, Ernest, Ando, Takashi, Li, Baozhen, Southwick, Richard, Stathis, James

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  7. 7
    Modeling of NBTI Kinetics in Replacement Metal Gate Si and SiGe FinFETs-Part-II: AC Stress and Recovery

    Modeling of NBTI Kinetics in Replacement Metal Gate Si and SiGe FinFETs-Part-II: AC Stress and Recovery by Parihar, Narendra, Southwick, Richard G., Wang, Miaomiao, Stathis, James H., Mahapatra, Souvik

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  8. 8
    Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics

    Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics by Wang, Miaomiao, Southwick, Richard G., Cheng, Kangguo, Stathis, James H.

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  9. 9
    Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs

    Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs by Choudhury, Nilotpal, Sharma, Uma, Zhou, Huimei, Southwick, Richard G., Wang, Miaomiao, Mahapatra, Souvik

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  10. 10
    Preparing Controlled Vocabularies for Linked Data: Benefits and Challenges

    Preparing Controlled Vocabularies for Linked Data: Benefits and Challenges by Southwick, Silvia B., Lampert, Cory K., Southwick, Richard

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  11. 11
    On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs

    On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs by Parihar, Narendra, Sharma, Uma, Southwick, Richard G., Wang, Miaomiao, Stathis, James H., Mahapatra, Souvik

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  12. 12
    TDDB Reliability in Gate-All-Around Nanosheet

    TDDB Reliability in Gate-All-Around Nanosheet by Zhou, Huimei, Wang, Miaomiao, Bao, Ruqiang, Shen, Tian, Wu, Ernest, Southwick, Richard, Zhang, Jingyun, Basker, Veeraraghavan, Guo, Dechao

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  13. 13
    NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor

    NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor by Zhou, Huimei, Wang, Miaomiao, Zhang, Jingyun, Watanabe, Koji, Durfee, Curtis, Mochizuki, Shogo, Bao, Ruqiang, Southwick, Richard, Bhuiyan, Maruf, Veeraraghavan, Basker

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  14. 14
    Comparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETs

    Comparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETs by Parihar, Narendra, Southwick, Richard G., Sharma, Uma, Miaomiao Wang, Stathis, James H., Mahapatra, Souvik

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  15. 15
    Frequency-Modulated Charge Pumping With Extremely High Gate Leakage

    Frequency-Modulated Charge Pumping With Extremely High Gate Leakage by Ryan, Jason Thomas, Jibin Zou, Southwick, Richard, Campbell, Jason Paul, Cheung, Kin P., Oates, Anthony S., Ru Huang

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  16. 16
    Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor

    Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor by Wang, Miaomiao, Zhang, Jingyun, Zhou, Huimei, Southwick, Richard G., Kuo Chao, Robin Hsin, Miao, Xin, Basker, Veeraraghavan S., Yamashita, Tenko, Guo, Dechao, Karve, Gauri, Bu, Huiming, Stathis, James H.

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  17. 17
    On the thermal activation of negative bias temperature instability

    On the thermal activation of negative bias temperature instability by Southwick, R.G., Knowlton, W.B., Kaczer, B., Grasser, T.

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  18. 18
    DG summary: FEOL discussion

    DG summary: FEOL discussion by Stathis, Jim, Southwick, Richard

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  19. 19
    Frequency-Modulated Charge Pumping: Defect Measurements With High Gate Leakage

    Frequency-Modulated Charge Pumping: Defect Measurements With High Gate Leakage by Ryan, Jason Thomas, Southwick, Richard G., Campbell, Jason Paul, Cheung, Kin P., Oates, Anthony S., Suehle, John S.

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  20. 20
    Temporal Issues in Information and Communication Technology-Enabled Organizational Change: Evidence From an Enterprise Systems Implementation

    Temporal Issues in Information and Communication Technology-Enabled Organizational Change: Evidence From an Enterprise Systems Implementation by Sawyer, Steve, Southwick, Richard

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