Search Results - Sreenivasulu, Vakkalakula Bharath

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  1. 1
    Performance Improvement of Spacer-Engineered N-Type Tree Shaped NSFET Toward Advanced Technology Nodes

    Performance Improvement of Spacer-Engineered N-Type Tree Shaped NSFET Toward Advanced Technology Nodes by Gowthami, Ummadisetti, Kumar Panigrahy, Asisa, Shobha Rani, Depuru, Nayak Bhukya, Muralidhar, Bharath Sreenivasulu, Vakkalakula, Durga Prakash, M.

    Published in IEEE access
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  2. 2
    DC and RF performance analysis of enhancement mode fin-shaped tri-gate AlGaN/GaN HEMT and MOSHEMT with ultra-thin barrier layer

    DC and RF performance analysis of enhancement mode fin-shaped tri-gate AlGaN/GaN HEMT and MOSHEMT with ultra-thin barrier layer by Chakrabarty, Ashutosh, Sahoo, Narayan, Panigrahy, Asisa Kumar, Sreenivasulu, Vakkalakula Bharath, Swain, Raghunandan

    Published in Physica scripta
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  3. 3
    Benchmarking of Multi-Bridge-Channel FETs Toward Analog and Mixed-Mode Circuit Applications

    Benchmarking of Multi-Bridge-Channel FETs Toward Analog and Mixed-Mode Circuit Applications by Sreenivasulu, Vakkalakula Bharath, Neelam, Aruna Kumari, Panigrahy, Asisa Kumar, Vakkalakula, Lokesh, Singh, Jawar, Singh, Shiv Govind

    Published in IEEE access
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  4. 4
    Analysis of Novel Core-Shell Junctionless Nanosheet FET for CMOS Logic Applications

    Analysis of Novel Core-Shell Junctionless Nanosheet FET for CMOS Logic Applications by Sreenivasulu, Vakkalakula Bharath, Prasad, M., Deepthi, Epuri, Kumar, Aruru Sai, Mangalampalli, S. Sudheer

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  5. 5
    Spacer Dielectric Analysis of Multi-Channel Nanosheet FET for Nanoscale Applications

    Spacer Dielectric Analysis of Multi-Channel Nanosheet FET for Nanoscale Applications by Panigrahy, Asisa Kumar, Amudalapalli, Veera Venkata Sai, Rani, Depuru Shobha, Bhukya, Muralidhar Nayak, Valiveti, Hima Bindu, Sreenivasulu, Vakkalakula Bharath, Swain, Raghunandan

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  6. 6
    A Novel LG = 40 nm AlN-GDC-HEMT on SiC Wafer With fT/IDS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers

    A Novel LG = 40 nm AlN-GDC-HEMT on SiC Wafer With fT/IDS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers by Mounika, B., Panigrahy, Asisa Kumar, Ajayan, J., Khadar Basha, N., Bharath Sreenivasulu, Vakkalakula, Durga Prakash, M., Bhattacharya, Sandip, Nirmal, D.

    Published in IEEE access
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  7. 7
    p-Type Trigate Junctionless Nanosheet MOSFET: Analog/RF, Linearity, and Circuit Analysis

    p-Type Trigate Junctionless Nanosheet MOSFET: Analog/RF, Linearity, and Circuit Analysis by Vakkalakula, Bharath Sreenivasulu, Vadthiya, Narendar

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  8. 8
    A Novel L G = 40 nm AlN-GDC-HEMT on SiC Wafer With f T /I DS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers

    A Novel L G = 40 nm AlN-GDC-HEMT on SiC Wafer With f T /I DS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers by Mounika, B., Panigrahy, Asisa Kumar, Ajayan, J., Khadar Basha, N., Bharath Sreenivasulu, Vakkalakula, Durga Prakash, M., Bhattacharya, Sandip, Nirmal, D.

    Published in IEEE access
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  9. 9
    Design of Resistive Load Inverter and Common Source Amplifier Circuits Using Symmetric and Asymmetric Nanowire FETs

    Design of Resistive Load Inverter and Common Source Amplifier Circuits Using Symmetric and Asymmetric Nanowire FETs by Sreenivasulu, V. Bharath, Kumari, N. Aruna, Lokesh, Vakkalakula, Ajayan, J., Uma, M., Vijayvargiya, Vikas

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  10. 10
    Common Source Amplifier and Ring Oscillator Circuit Performance Optimization Using Multi-Bridge Channel FETs

    Common Source Amplifier and Ring Oscillator Circuit Performance Optimization Using Multi-Bridge Channel FETs by Sreenivasulu, V. Bharath, Kumari, N. Aruna, Lokesh, Vakkalakula, Vishvakarma, Santosh Kumar, Narendar, V.

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