Search Results - Srinidhi, Embar. R.

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  1. 1
    300W Dual Path GaN Doherty Power Amplifier with 65% Efficiency for Cellular Infrastructure Applications

    300W Dual Path GaN Doherty Power Amplifier with 65% Efficiency for Cellular Infrastructure Applications by Masood, Mir, Srinidhi, Embar. R., Rashev, Peter, Holt, John, Kenney, J. S.

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  2. 2
    Digitally Assisted Load Modulated Balanced Amplifier for 200W Cellular Infrastructure Applications

    Digitally Assisted Load Modulated Balanced Amplifier for 200W Cellular Infrastructure Applications by Srinidhi, Embar. R., Masood, M., Sharma, T., Staudinger, J, Dhar, Sagar K., Rashev, P., Tucker, G., Ghannouchi, F.M.

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  3. 3
    Simplified First-Pass Design of High-Efficiency Class-F−1 Power Amplifiers Based on Second-Harmonic Minima

    Simplified First-Pass Design of High-Efficiency Class-F−1 Power Amplifiers Based on Second-Harmonic Minima by Sharma, Tushar, Dhar, Sagar K., Holmes, Damon G., Darraji, Ramzi, R., Srinidhi Embar, Staudinger, Joseph, Jones, Jeffrey K., Ghannouchi, Fadhel M.

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  4. 4
    Linearity enhancement of GaN Doherty amplifier by forward gate current blocking method

    Linearity enhancement of GaN Doherty amplifier by forward gate current blocking method by Khalil, Ibrahim, Srinidhi, Embar R., Tucker, Geoffery

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  5. 5
    A New Method for Identification and Minimization of Distortion Sources in GaN HEMT Devices Based on Volterra Series Analysis

    A New Method for Identification and Minimization of Distortion Sources in GaN HEMT Devices Based on Volterra Series Analysis by Srinidhi, E.R., Jarndal, A., Kompa, G.

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  6. 6
    On the Second-Harmonic Null in Design Space of Power Amplifiers

    On the Second-Harmonic Null in Design Space of Power Amplifiers by Sharma, Tushar, Holmes, Damon G., Darraji, Ramzi, Srinidhi, Embar R., Staudinger, Joseph, Jones, Jeffrey K., Ghannouchi, Fadhel M.

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  7. 7
    Investigation of IMD3 in GaN HEMT based on extended volterra series analysis

    Investigation of IMD3 in GaN HEMT based on extended volterra series analysis by Srinidhi, E.R., Kompa, G.

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  8. 8
    Device inherent IMD reproducibility issues in GaN HEMTs

    Device inherent IMD reproducibility issues in GaN HEMTs by Srinidhi, E.R., Rui Ma, Kompa, G., Bangert, A.

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