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Numerical and experimental investigation on mc-Silicon growth process by varying the Si3N4 coating thickness of crucible
by
Anbu, G.
,
Srinivasan Supervisor, M.
,
Aravindan, G.
,
Avinash Kumar, M.
,
Ramasamy, P.
,
Sun, Niefeng
,
Sun, Tongnian
,
Li, Zaoyang
Published in
Journal of crystal growth
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Journal Title
Journal Of Crystal Growth
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Subjects
A1. Computer Simulation
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A1. Directional Solidification
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A1. Impurities
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B2. Semiconducting Silicon
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B3. Solar Cells
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Carbon Monoxide
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Carrier Lifetime
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Coating
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Crucibles
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Crystallography
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Directional Solidification
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Ingots
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Mass Transfer
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Materials Science
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Materials Science, Multidisciplinary
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Minority Carriers
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Oxygen
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Physical Sciences
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Physics
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Physics, Applied
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Elsevier Sd Backfile Materials Science
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Backfile Package - Physics General (Legacy) [Ypa]
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