Search Results - Stas, V.F

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  1. 1
    Properties of extremely thin silicon layer in silicon-on-insulator structure formed by smart-cut technology

    Properties of extremely thin silicon layer in silicon-on-insulator structure formed by smart-cut technology by Popov, V.P, Antonova, I.V, Stas, V.F, Mironova, L.V, Gutakovskii, A.K, Spesivtsev, E.V, Mardegzhov, A.S, Franznusov, A.A, Feofanov, G.N

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  2. 2
    Heterostructures formed on silicon by high-dose multi-energy hydrogen implantation

    Heterostructures formed on silicon by high-dose multi-energy hydrogen implantation by Naumova, O.V, Antonova, I.V, Popov, V.P, Stas, V.F

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  3. 3
    Donor center formation in hydrogen implanted silicon

    Donor center formation in hydrogen implanted silicon by Neustroev, E.P, Antonova, I.V, Stas, V.F, Popov, V.P, Obodnikov, V.I

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  4. 4
    Thermal donor formation in crystalline silicon irradiated by high energy ions

    Thermal donor formation in crystalline silicon irradiated by high energy ions by Neustroev, E.P, Antonova, I.V, Popov, V.P, Stas, V.F, Skuratov, V.A, Didyk, A.Yu

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  5. 5
    Splitting and electrical properties of the SOI structure formed from the heavily boron doped silicon with using of the smart-cut technology

    Splitting and electrical properties of the SOI structure formed from the heavily boron doped silicon with using of the smart-cut technology by Antonova, I.V., Popov, V.P., Stas, V.F., Gutakovskii, A.K., Plotnikov, A.E., Obodnikov, V.I.

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  6. 6
    Formation of the electrically active centres in silicon irradiated with high energy ions and annealed at temperatures of 350-1050/spl deg/C

    Formation of the electrically active centres in silicon irradiated with high energy ions and annealed at temperatures of 350-1050/spl deg/C by Antonova, I.V., Neustroev, E.P., Stas, V.F., Popov, V.P., Skuratov, V.A.

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