Search Results - Steans, P.H

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  1. 1
    Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots

    Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots by Joyce, P.B, Krzyzewski, T.J, Steans, P.H, Bell, G.R, Neave, J.H, Jones, T.S

    Published in Surface science
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  2. 2
    Variations in critical coverage for InAs/GaAs quantum dot formation in bilayer structures

    Variations in critical coverage for InAs/GaAs quantum dot formation in bilayer structures by Joyce, P.B, Krzyzewski, T.J, Steans, P.H, Bell, G.R, Neave, J.H, Jones, T.S

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  3. 3
    A new mechanism for reentrant behaviour in semiconductor epitaxy: a reflection high-energy electron diffraction study of the growth of GaAs(111)A thin films

    A new mechanism for reentrant behaviour in semiconductor epitaxy: a reflection high-energy electron diffraction study of the growth of GaAs(111)A thin films by Steans, P.H., Neave, J.H., Bell, G.R., Zhang, J., Joyce, B.A., Jones, T.S.

    Published in Surface science
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  4. 4
    Re-entrant behaviour in GaAs(1 1 1)A homoepitaxy

    Re-entrant behaviour in GaAs(1 1 1)A homoepitaxy by Steans, P.H, Neave, J.H, Zhang, J, Tok, E.S, Bell, G.R, Joyce, B.A, Jones, T.S

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