Electrical and Physical Characterization of 150-200V FLYMOSFETs by Roig, J., Weber, Y., Reynes, J.-M., Morancho, F., Stefanov, E.N., Dilhan, M., Sarrabayrouse, G.

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AN EFFICIENT DIFFUSION ALGORITHM FOR 2D VLSI PROCESS MODELING CODE by STEFANOV, E.N., ASENOV, A.M.

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Switching performance of 65 V vertical N-channel FLYMOSFETs by Théolier, L., Isoird, K., Tranduc, H., Morancho, F., Roig, J., Weber, Y., Stefanov, E.N., Reynès, J.-M.

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Switching performance of 65V vertical N-channel FLYMOSFETs by Théolier, L., Isoird, K., Tranduc, H., Morancho, F., Roig, J., Weber, Y., Stefanov, E.N., Reynès, J.-M.

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AN EFFICIENT DIFFUSION ALGORITHM FOR 2-D VLSI PROCESS MODELING CODE by STEFANOV, E.N., ASENOV, A.M.

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Characterization of low pressure chemically vapour- deposited thin silicon nitride films by Popova, L.I., Antov, B.Z., Shopov, A.V., Sotirova, M.S., Beshkov, G.D., Stefanov, E.N.

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Hot electron effects in narrow width MOS devices by Petrova, R.S., Kamburova, R.S., Vitanov, P.K., Stefanov, E.N.

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