Search Results - Steinbrunner, Erich

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  1. 1
    MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor

    MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor by Seryogin, George, Alema, Fikadu, Valente, Nicholas, Fu, Houqiang, Steinbrunner, Erich, Neal, Adam T., Mou, Shin, Fine, Aaron, Osinsky, Andrei

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  2. 2
    Si doping in MOCVD grown (010) β-(AlxGa1−x)2O3 thin films

    Si doping in MOCVD grown (010) β-(AlxGa1−x)2O3 thin films by Bhuiyan, A. F. M. Anhar Uddin, Feng, Zixuan, Meng, Lingyu, Fiedler, Andreas, Huang, Hsien-Lien, Neal, Adam T., Steinbrunner, Erich, Mou, Shin, Hwang, Jinwoo, Rajan, Siddharth, Zhao, Hongping

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  3. 3
    Reduction of unintentional Si doping in β-Ga2O3 grown via plasma-assisted molecular beam epitaxy

    Reduction of unintentional Si doping in β-Ga2O3 grown via plasma-assisted molecular beam epitaxy by Asel, Thaddeus J., Steinbrunner, Erich, Hendricks, Jessica, Neal, Adam T., Mou, Shin

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