Search Results - Stinzianni, E.

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  1. 1
    Flux pinning enhancement in YBa2Cu3O7−x films with BaSnO3 nanoparticles

    Flux pinning enhancement in YBa2Cu3O7−x films with BaSnO3 nanoparticles by Varanasi, Chakrapani V, Barnes, P N, Burke, J, Brunke, L, Maartense, I, Haugan, T J, Stinzianni, E A, Dunn, K A, Haldar, P

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  2. 2
    Temperature dependent thermal conductivity of Si/SiC amorphous multilayer films

    Temperature dependent thermal conductivity of Si/SiC amorphous multilayer films by Mazumder, Monalisa, Borca-Tasciuc, Theodorian, Teehan, Sean C., Stinzianni, Emilio, Efstathiadis, Harry, Solovyov, Slowa

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  3. 3
    Statistical demonstration of silicide-like uniform and ultra-low specific contact resistivity using a metal/high-k/Si stack in a sidewall contact test structure

    Statistical demonstration of silicide-like uniform and ultra-low specific contact resistivity using a metal/high-k/Si stack in a sidewall contact test structure by Majumdar, K., Clark, R., Ngai, T., Tapily, K., Consiglio, S., Bersch, E., Matthews, K., Stinzianni, E., Trickett, Y., Nakamura, G., Wajda, C., Leusink, G., Chong, H., Kaushik, V., Woicik, J., Hobbs, C., Kirsch, P.

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  4. 4
    Relationship of aluminum grain size to the grain size of polycrystalline silicon produced by the aluminum induced crystallization of amorphous silicon

    Relationship of aluminum grain size to the grain size of polycrystalline silicon produced by the aluminum induced crystallization of amorphous silicon by Stinzianni, E., Dunn, K., Zhao Zhouying, Rane-Fondacaro, M., Efstathiadis, H., Haldar, P.

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  5. 5
    Flux pinning enhancement in YBa 2 Cu 3 O 7− x films with BaSnO 3 nanoparticles

    Flux pinning enhancement in YBa 2 Cu 3 O 7− x films with BaSnO 3 nanoparticles by Varanasi, Chakrapani V, Barnes, P N, Burke, J, Brunke, L, Maartense, I, Haugan, T J, Stinzianni, E A, Dunn, K A, Haldar, P

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  6. 6
    Ultra low contact resistivity (−8 Ω-cm2) to In0.53Ga0.47As fin sidewall (110)/(100) surfaces: Realized with a VLSI processed III-V fin TLM structure fabricated with III-V on Si substrates

    Ultra low contact resistivity (−8 Ω-cm2) to In0.53Ga0.47As fin sidewall (110)/(100) surfaces: Realized with a VLSI processed III-V fin TLM structure fabricated with III-V on Si sub... by Lee, Rinus T. P., Ohsawa, Y., Huffman, C., Trickett, Y., Nakamura, G., Hatem, C., Rao, K. V., Khaja, F., Lin, R., Matthews, K., Dunn, K., Jensen, A., Karpowicz, T., Nielsen, Peter F., Stinzianni, E., Cordes, A., Hung, P. Y., Kim, D-H, Hill, R. J. W., Loh, W-Y, Hobbs, C.

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  7. 7
    Mechanisms of retention loss in Ge2Sb2Te5-based Phase-Change Memory

    Mechanisms of retention loss in Ge2Sb2Te5-based Phase-Change Memory by Shih, Y.H., Wu, J.Y., Rajendran, B., Lee, M.H., Cheek, R., Lamorey, M., Breitwisch, M., Zhu, Y., Lai, E.K., Chen, C.F., Stinzianni, E., Schrott, A., Joseph, E., Dasaka, R., Raoux, S., Lung, H.L., Lam, C.

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  8. 8
    Flux Pinning Enhancement in YBa2Cu3O7-x Films with BaSnO3 Nanoparticles

    Flux Pinning Enhancement in YBa2Cu3O7-x Films with BaSnO3 Nanoparticles by Varanasi, Chakrapani V, Burke, J, Brunke, L, Maartense, I, Barnes, P N, Haugan, T J, Stinzianni, E A, Dunn, K A, Haldar, P

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