Performance of High-Power AlInGaN Light Emitting Diodes by Kim, A.Y., Götz, W., Steigerwald, D.A., Wierer, J.J., Gardner, N.F., Sun, J., Stockman, S.A., Martin, P.S., Krames, M.R., Kern, R.S., Steranka, F.M.

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High-Power III-Nitride Emitters for Solid-State Lighting by Krames, M.R., Bhat, J., Collins, D., Gardner, N.F., Götz, W., Lowery, C.H., Ludowise, M., Martin, P.S., Mueller, G., Mueller-Mach, R., Rudaz, S., Steigerwald, D.A., Stockman, S.A., Wierer, J.J.

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Dopant interactions and Mg segregation in (Al xGa 1− x) 0.5In 0.5P heterostructures by Grillot, P.N., Stockman, S.A., Huang, J.-W., Chang, Y.L.

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Dopant interactions and Mg segregation in (AlxGa1−x)0.5In0.5P heterostructures by Grillot, P.N., Stockman, S.A., Huang, J.-W., Chang, Y.L.

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Effect of post-growth cooling ambient on acceptor passivation in carbon-doped GaAs grown by metalorganic chemical vapor deposition by STOCKMAN, S. A, HANSON, A. W, JACKSON, S. L, BAKER, J. E, STILLMAN, G. E

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Intrinsic and oxygen-related deep level defects in In 0.5(Al xGa 1− x) 0.5P grown by metal-organic vapor phase epitaxy by Cederberg, J.G., Bieg, B., Huang, J.-W., Stockman, S.A., Peanasky, M.J., Kuech, T.F.

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Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD by STOCKMAN, S. A, HANSON, A. W, LICHTENTHAL, S. M, FRESINA, M. T, HÖFLER, G. E, HSIEH, K. C, STILLMAN, G. E

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A comparison of In/sub 0.5/Ga/sub 0.5/P/GaAs:C single- and double-heterojunction bipolar transistors grown by LP-MOCVD by Hanson, A.W., Stockman, S.A., Stillman, G.E.

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Comparison of In/sub 0.5/Ga/sub 0.5/P/GaAs single- and double-heterojunction bipolar transistors with a carbon-doped base by Hanson, A.W., Stockman, S.A., Stillman, G.E.

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InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors with a carbon-doped base grown by MOCVD by Hanson, A.W., Stockman, S.A., Stillman, G.E.

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Intrinsic and oxygen-related deep level defects in In0.5(AlxGa1-x)0.5P grown by metal-organic vapor phase epitaxy by CEDERBERG, J. G, BIEG, B, HUANG, J.-W, STOCKMAN, S. A, PEANASKY, M. J, KUECH, T. F

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Semi-insulating InP grown at low temperature by metalorganic chemical vapor deposition by Gardner, Nathan F., Hartmann, Quesnell J., Stockman, Stephen A., Stillman, Gregory E., Baker, Judith E., Malin, Jay I., Hsieh, K. C.

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Zero-field time-of-flight characterization of minority-carrier transport in heavily carbon-doped GaAs by COLOMB, C. M, STOCKMAN, S. A, GARDNER, N. F, CURTIS, A. P, STILLMAN, G. E, LOW, T. S, MARS, D. E, DAVITO, D. B

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Effects of annealing on the performance of InP/lnGaAs HBTs grown by LP-MOCVD by Hartmann, Q.J., Fresina, M.T., Ahmari, D.A., Stockman, S.A., Baker, J.E., Barlage, D., Hwangbo, H., Yung, A., Feng, M., Stillman, G.E.

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Semi-insulating InP grown with a CCl/sub 4/ doping source by Stillman, G.E., Gardner, N.F., Hartmann, Q.J., Stockman, S.A., Baker, J.E.

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Semi-insulating CCl/sub 4/-doped InP grown at low temperature by LP-MOCVD by Gardner, N.F., Hartmann, Q.J., Stockman, S.A., Pan, N., Stillman, G.E.

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High-power GaN-based LEDs for lighting and display applications by Stockman, S.A., Kim, A.Y., Misra, M., Grillot, P., Cook, L., Watanabe, S., Mann, R., Hudson, L., Gotz, W., Krames, M.R., Steigerwald, D., Martin, P.S., Wall, F., Steranka, F.

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Carbon doping of In/sub x/Ga/sub 1-x/As by MOCVD using CCl/sub 4 by Stockman, S.A., Hanson, A.W., Curtis, A.P., Stillman, G.

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Transparent-substrate (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P light-emitting diodes with thin active regions by Gardner, N.F., Chui, H.C., Chen, E.I., Krames, M.R., Huang, J.-W., Kish, F.A., Stockman, S.A., Kocot, C.P., Tan, T.S., Moll, N.

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High-flux and high-efficiency nitride-based light-emitting devices by Gardner, N.F., Bhat, J., Collins, D., Cook, L., Craford, M.G., Fletcher, R.M., Grillot, P., Gotz, W.K., Kueper, M., Khare, R., Kim, A., Krames, M.R., Harbers, G., Ludowise, M., Martin, P.S., Misra, M., Mueller, G., Mueller-Mach, R., Rudaz, S., Shen, Y.-C., Steigerwald, D., Stockman, S.A., Subramanya, S., Trottier, T., Wierer, J.J.

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