Monepantel: the most studied new anthelmintic drug of recent years by LECOVÁ, L., STUCHLÍKOVÁ, L., PRCHAL, L., SKÁLOVÁ, L.

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Efficacy of monepantel against lower developmental stages of a multi-resistant and susceptible Haemonchus contortus isolates: an in vitro study by Lecová, L, Stuchlíková, L, Lamka, J, pulák, M, Várady, M, Skálová, L

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Defect distribution in InGaAsN/GaAs multilayer solar cells by Kosa, A., Stuchlikova, L., Harmatha, L., Mikolasek, M., Kovac, J., Sciana, B., Dawidowski, W., Radziewicz, D., Tlaczala, M.

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Tacrine First-Phase Biotransformation and Associated Hepatotoxicity: A Possible Way to Avoid Quinone Methide Formation by Novak, Martin, Vajrychova, Marie, Koutsilieri, Stefania, Sismanoglou, Despoina-Christina, Kobrlova, Tereza, Prchal, Lukas, Svobodova, Barbora, Korabecny, Jan, Zarybnicky, Tomas, Raisova-Stuchlikova, Lucie, Skalova, Lenka, Lauschke, Volker M., Kučera, Radim, Soukup, Ondrej

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SiC Power TrenchMOS Transistor Under Repetitive Avalanche Stress by Marek, Juraj, Kozarik, Jozef, Minarik, Michal, Chvala, Ales, Matus, Matej, Stuchlikova, L.

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Deep energy levels in RuO2∕4H–SiC Schottky barrier structures by Stuchlikova, L., Buc, D., Harmatha, L., Helmersson, U., Chang, W. H., Bello, I.

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Improvement in the determination of accuracy of enthalpy of ionization from the isothermal deep level transient spectroscopy by Stuchlíková, L'., Gaži, M.

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Study of the defect distribution in power SiC-MOSFET before and after applied electrical stress by Stuchlikova, L., Matus, M., Cincurak, D., Marek, J., Benko, P., Chvala, A.

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Study of InAlGaN/GaN HEMT structures by DLTFS with optical excitation by Matus, M., Drobny, J., Kosa, A., Marek, J., Kovac, J., Stuchlikova, L.

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DLTS Study of Emission and Capture Processes in InAlGaN/GaN HEMT Structures for 5G by Matus, M., Drobny, J., Vadovsky, J., Kosa, A., Benko, P., Kovac, J., Delage, S. L., Stuchlikova, L.

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Investigation of deep energy levels in heterostructures based on GaN by DLTS by Stuchlíková, L, Šebok, J, Rybár, J, Petrus, M, Nemec, M, Harmatha, L, Benkovská, J, Kováč, J, Škriniarová, J, Lalinský, T, Paskiewicz, R, Tlaczala, M

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Determination of the 2D-Electron Gas Density in a Quantum Well from C-T and C-V Measurements by Harmatha, L., Stuchlíková, L., Csabay, O., Thurzo, I., Gornik, E., Strasser, G.

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The Influence of the Rapid Thermal Annealing Process on Defect Distribution in GaAsN p-i-n Structures for Solar Cells by Kosa, A., Drobny, J., Dawidowski, W., Mikolasek, M., Sciana, B., Stuchlikova, L.

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Study of Emission and Capture Processes in Semi-vertical GaN-on-Si Trench-MOSFETs by Drobny, J., Marek, J., Kosa, A., Geens, K., Borga, M., Liang, H., You, S., Decoutere, S., Stuchlikova, L.

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Quo Vadis, e-learning? by Stuchlikova, L., Benkovska, J.

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Electrical characterization of 4H–SiC Schottky diodes with a RuO2 and a RuWOx Schottky contacts by Buc, Dalibor, Stuchlikova, Lubica, Harmatha, Ladislav, Hotovy, Ivan

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Investigation of RuO2/4H–SiC Schottky diode contacts by deep level transient spectroscopy by Buc, D., Stuchlikova, L., Helmersson, U., Chang, W.H., Bello, I.

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Investigation of RuO 2/4H–SiC Schottky diode contacts by deep level transient spectroscopy by Buc, D., Stuchlikova, L., Helmersson, U., Chang, W.H., Bello, I.

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Electrical characterization of the InAlN/GaN heterostructures by capacitance methods by Stuchlikova, L., Petrus, M., Kovac, J., Rybar, J., Harmatha, L., Donoval, D., Benkovska, J., Behmenburg, H., Heuken, M.

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Deep levels in InGaAsN/GaAs and InGaAs/GaAs heterojunctions by Rybar, J., Stuchlikova, L., Petrus, M., Harmatha, L., Sciana, B., Radziewicz, D., Pucicki, D., Tlaczala, M.

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