Nanocrystalline diamond film grown by pulsed linear antenna microwave CVD by Gu, Jiteng, Chen, Zhongxin, Li, Runlai, Zhao, Xiaoxu, Das, Chandan, Sahmuganathan, Vicknesh, Sudijono, John, Lin, Ming, Loh, Kian Ping

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Structural Colors Based on Diamond Metasurface for Information Encryption by Gu, Jiteng, Liu, Yan, Meng, Nannan, Sahmuganathan, Vicknesh, Tan, Sze Chieh, Sudijono, John, Tang, Jiecong, Venkatasubramanian, Eswaranand, Mallick, Abhijit, Tjiptoharson, Febiana, Rezaei, Soroosh Daqiqeh, Teo, Siew Lang, Zhu, Qiang, Chen, Yunjie, Lin, Ming, Dong, Zhaogang, Loh, Kian Ping

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Poly-adamantane as precursor for low temperature chemical vapor deposition of nanocrystalline diamond films by Gu, Jiteng, Lyu, Jing, Chen, Zhongxin, Xu, Haisen, Sahmuganathan, Vicknesh, Tan, Sze Chieh, Sudijono, John, Tang, Jiecong, Venkatasubramanian, Eswaranand, Mallick, Abhijit, Yang, Shuo-Wang, Teo, Siew Lang, Lin, Ming, Loh, Kian Ping

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Impact of in situ carbon doping on implant damage and strain relaxation of epitaxial silicon germanium layer on silicon by Liu, J. P., Domenicucci, A., Madan, A., Li, J., Holt, J., Sudijono, John

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Impact of NBTI Induced Statistical Variation to SRAM Cell Stability by La Rosa, G., Wee Loon Ng, Rauch, S., Wong, R., Sudijono, J.

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Impact of in situ carbon doping on implant damage and strain relaxationof epitaxial silicon germanium layer on silicon by Liu, J. P., Domenicucci, A., Madan, A., Li, J., Holt, J., Sudijono, John

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Scaling Down Diffusion Barriers: Performance and Thickness Dependence of TaN and Two-Dimensional-Material-Based Barrier Layers by Astier, Hippolyte P.A.G., Juvaid, M.M., Sinha, Soumyadeep, Chung, Jing Yang, Srivastava, Saurabh, Das, Chandan, Sudijono, John, Gradecak, Silvija

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Cool Copper Template for the Formation of Oriented Nanocrystalline α-Tantalum by Yong, Clare, Zhang, Bei Chao, Seet, Chim Seng, See, Alex, Chan, Lap, Sudijono, John, Liew, San Leong, Tung, Chih-Hang, Zeng, Hua Chun

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Novel High-Performance Analog Devices for Advanced Low-Power High-$k$ Metal Gate Complementary Metal--Oxide--Semiconductor Technology by Han, Jin-Ping, Shimizu, Takashi, Pan, Li-Hong, Voelker, Moritz, Bernicot, Christophe, Arnaud, Franck, Mocuta, Anda, Stahrenberg, Knut, Azuma, Atsushi, Eller, Manfred, Yang, Guoyong, Jaeger, Daniel, Zhuang, Haoren, Miyashita, Katsura, Stein, Kenneth, Nair, Deleep, Park, Jae Hoo, Kohler, Sabrina, Hamaguchi, Masafumi, Li, Weipeng, Kim, Kisang, Chanemougame, Daniel, Kim, Nam Sung, Uchimura, Sadaharu, Tsutsui, Gen, Wiedholz, Christian, Miyake, Shinich, Meer, Hans van, Liang, Jewel, Ostermayr, Martin, Lian, Jenny, Celik, Muhsin, Donaton, Ricardo, Barla, Kathy, Na, MyungHee, Goto, Yoshiro, Sherony, Melanie, Johnson, Frank S, Wachnik, Richard, Sudijono, John, Kaste, Ed, Sampson, Ron, Ku, Ja-Hum, Steegen, An, Neumueller, Walter

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Novel High-Performance Analog Devices for Advanced Low-Power High- k Metal Gate Complementary Metal–Oxide–Semiconductor Technology by Han, Jin-Ping, Shimizu, Takashi, Pan, Li-Hong, Voelker, Moritz, Bernicot, Christophe, Arnaud, Franck, Mocuta, Anda, Stahrenberg, Knut, Azuma, Atsushi, Eller, Manfred, Yang, Guoyong, Jaeger, Daniel, Zhuang, Haoren, Miyashita, Katsura, Stein, Kenneth, Nair, Deleep, Park, Jae Hoo, Kohler, Sabrina, Hamaguchi, Masafumi, Li, Weipeng, Kim, Kisang, Chanemougame, Daniel, Kim, Nam Sung, Uchimura, Sadaharu, Tsutsui, Gen, Wiedholz, Christian, Miyake, Shinich, Meer, Hans van, Liang, Jewel, Ostermayr, Martin, Lian, Jenny, Celik, Muhsin, Donaton, Ricardo, Barla, Kathy, Goto, Yoshiro, Sherony, Melanie, Johnson, Frank S., Wachnik, Richard, Sudijono, John, Kaste, Ed, Sampson, Ron, Ku, Ja-Hum, Steegen, An, Neumueller, Walter

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SRAM cell design for stability methodology by Wann, C., Wong, R., Frank, D.J., Mann, R., Shang-Bin Ko, Croce, P., Lea, D., Hoyniak, D., Yoo-Mi Lee, Toomey, J., Weybright, M., Sudijono, J.

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CMOS and Interconnect Reliability - Interconnect, ESD, and Failure Analysis

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Fully Relaxed Epitaxial Silicon Germanium on Silicon (001) with Low Threading Dislocation Density by Ion Implantation and Anneal by Jinping Liu, Kasim, J., Lee, P., Chandra, R., See, A., Sudijono, J.

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A novel atomic layer oxidation technique for EOT scaling in gate-last high-к/metal gate CMOS technology by Min Dai, Jinping Liu, Guo, Dechao, Krishnan, S., Shepard, J. F., Ronsheim, P., Unoh Kwon, Siddiqui, S., Krishnan, R., Zhengwen Li, Kai Zhao, Sudijono, J., Chudzik, M. P.

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Ultra-thin tungsten CVD nucleation layer for sub-100nm contact applications by GUPTA, Jyoti, SUDIJONO, John, HSIA, L. C, SINGH, Shubhranshu

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Properties and Gap-Fill Capability of HPD-CVD Phosphosilicate Glass Films for Subquarter-Micrometer ULSI Device Technology by Vassiliev, Vladislav Y.

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