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Search Results - Suslyakov, A. O.
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Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns
by
Zverev, A. V.
,
Suslyakov, A. O.
,
Sabinina, I. V.
,
Sidorov, G. Yu
,
Yakushev, M. V.
,
Kuzmin, V. D.
,
Varavin, V. S.
,
Remesnik, V. G.
,
Makarov, Yu. S.
,
Predein, A. V.
,
Gorshkov, D. V.
,
Dvoretsky, S. A.
,
Vasil’ev, V. V.
,
Sidorov, Yu. G.
,
Latyshev, A. V.
,
Kremis, I. I.
Published in
Journal of communications technology & electronics
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Effective charge carrier lifetime in CdHgTe variable-gap structures
by
Osadchiı̆, V. M.
Published in
Semiconductors (Woodbury, N.Y.)
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Infrared focal plane assemblies based on HgCdTe/Si(310) heterostructure
by
Yakushev, M. V.
,
Varavin, V. S.
,
Vasil’ev, V. V.
,
Dvoretsky, S. A.
,
Predein, A. V.
,
Sabinina, I. V.
,
Sidorov, Yu. G.
,
Sorochkin, A. V.
,
Suslyakov, A. O.
Published in
Technical physics letters
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HgCdTe heterostructures on Si(310) substrates for infrared photodetectors
by
Yakushev, M. V.
,
Brunev, D. V.
,
Varavin, V. S.
,
Dvoretskii, S. A.
,
Predein, A. V.
,
Sabinina, I. V.
,
Sidorov, Yu. G.
,
Sorochkin, A. V.
,
Suslyakov, A. O.
Published in
Optoelectronics, instrumentation, and data processing
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Planar photodiodes based on p-HgCdTe ( x = 0.22) epilayers grown by molecular beam epitaxy
by
Ovsyuk, V.N.
,
Remesnik, V.G.
,
Studenikin, S.A.
,
Suslyakov, A.O.
,
Talipov, N.Kh
,
Vasil'ev, V.V.
,
Zahar'yash, T.I.
,
Sidorov, Yu.G.
,
Dvoretsky, S.A.
,
Mikhaylov, N.N.
,
Liberman, V.G.
,
Varavin, V.S.
Published in
Infrared physics & technology
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A focal plane array detector based on a variband isotype P-p junction in MCT layers grown by molecular beam epitaxy
by
Vasilyev, V. V.
,
Dvoretsky, S. A.
,
Varavin, V. S.
,
Mikhailov, N. N.
,
Remesnik, V. G.
,
Sidorov, Yu. G.
,
Suslyakov, A. O.
,
Aseev, A. L.
Published in
Optoelectronics, instrumentation, and data processing
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A microwave detector based on an MCT photodiode for subthermonuclear plasma research
by
Vasilyev, V. V.
,
Dvoretsky, S. A.
,
Varavin, V. S.
,
Mikhailov, N. N.
,
Marchishin, I. V.
,
Sidorov, Yu. G.
,
Suslyakov, A. O.
,
Ovsyuk, V. N.
,
Burmasov, V. S.
,
Popov, S. S.
,
Kruglyakov, E. P.
,
Aseev, A. L.
Published in
Optoelectronics, instrumentation, and data processing
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Study of the effect of graded gap epilayers on the performance of CdxHg1−x Te photodiodes
by
Vasil’ev, V. V.
,
Esaev, D. G.
,
Kravchenko, A. F.
,
Osadchii, V. M.
,
Suslyakov, A. O.
Published in
Semiconductors (Woodbury, N.Y.)
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Planar photodiodes based on p-HgCdTe (x = 0.22) epilayers grown by molecular beam epitaxy
by
OVSYUK, V. N
,
REMESNIK, V. G
,
LIBERMAN, V. G
,
VARAVIN, V. S
,
STUDENIKIN, S. A
,
SUSLYAKOV, A. O
,
TALIPOV, N. KH
,
VASIL'EV, V. V
,
ZAHAR'YASH, T. I
,
SIDOROV, YU. G
,
DVORETSKY, S. A
,
MIKHAYLOV, N. N
Published in
Infrared physics & technology
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LWIR detectors for subthermonuclear plasma study
by
Vasiliev, V.
,
Varavin, V.
,
Dvoretsky, S.
,
Marchishin, I.
,
Mikhailov, N.
,
Sidorov, Y.
,
Ovsyuk, V.N.
,
Suslyakov, A.
,
Aseev, A.
,
Burmasov, V.
,
Gorbunov, O.
,
Kruglyakov, E.
,
Polosatkin, S.
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Conference Proceeding
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