Search Results - Suvkhanov, A

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  1. 1
    New VDMOS structure with Discontinuous Thick Inter-Body Oxide to reduce gate-to-drain charge

    New VDMOS structure with Discontinuous Thick Inter-Body Oxide to reduce gate-to-drain charge by Roig, J, Mouhoubi, S, Gassot, P, Charavel, R, Suvkhanov, A, Moens, P, Bauwens, F, Tack, M

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  2. 2
    Heteroepitaxial structures of SrTiO3/TiN on Si(100) by in   situ pulsed laser deposition

    Heteroepitaxial structures of SrTiO3/TiN on Si(100) by in   situ pulsed laser deposition by Vispute, R. D., Narayan, J., Dovidenko, K., Jagannadham, K., Parikh, N., Suvkhanov, A., Budai, J. D.

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  3. 3
    Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC

    Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC by Joshkin, V. A., Parker, C. A., Bedair, S. M., Krasnobaev, L. Y., Cuomo, J. J., Davis, R. F., Suvkhanov, A.

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  4. 4
    Influence of oxygen background pressure on crystalline quality of SrTiO3 films grown on MgO by pulsed laser deposition

    Influence of oxygen background pressure on crystalline quality of SrTiO3 films grown on MgO by pulsed laser deposition by Kalyanaraman, R., Vispute, R. D., Oktyabrsky, S., Dovidenko, K., Jagannadham, K., Narayan, J., Budai, J. D., Parikh, N., Suvkhanov, A.

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  5. 5
    Ion implantation of epitaxial GaN films: damage, doping and activation

    Ion implantation of epitaxial GaN films: damage, doping and activation by Parikh, Nalin, Suvkhanov, Agajan, Lioubtchenko, Mike, Carlson, Eric, Bremser, Michael, Bray, David, Davis, Robert, Hunn, John

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  6. 6
    Radiation Characteristics of a 0.11μm Modified Commercial CMOS Process

    Radiation Characteristics of a 0.11μm Modified Commercial CMOS Process by Poivey, C., Hak Kim, Berg, M.D., Forney, J., Seidleck, C., Vilchis, M.A., Phan, A., Irwin, T., LaBel, K.A., Saigusa, R.K., Mirabedini, M.R., Finlinson, R., Suvkhanov, A., Hornback, V., Jun Song, Tung, J.

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  7. 7
    X-ray and secondary ion mass spectrometry investigation of activation behavior of self-preamorphized silicon substrate

    X-ray and secondary ion mass spectrometry investigation of activation behavior of self-preamorphized silicon substrate by Suvkhanov, Agajan, Mirabedini, Mohammad, Hornback, Verne, Chen, Zhihao

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  8. 8
    Investigation of indium activation by SRP and SIMS for sub-0.1 μm retrograde channels

    Investigation of indium activation by SRP and SIMS for sub-0.1 μm retrograde channels by Suvkhanov, A., Mirabedini, M., Hornback, V.

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  9. 9
    Radiation evaluation of a 0.18 μm commercial CMOS process and modified radiation hardened versions of this process

    Radiation evaluation of a 0.18 μm commercial CMOS process and modified radiation hardened versions of this process by Poivey, Christian, Kim, Hak, Forney, Jim, La Bel, Kenneth A., Saigusa, Rajan, Vilchis, Miguel, Finlinson, Rick, Suvkhanov, Agajan, Hornback, Verne, Song, Jun, Tung, Jeffrey, Mirabedini, Mohammad

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