Search Results - Svagatova, A.

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    Determination of Secondary-Ions Yield in SIMS Depth Profiling of Si, Mg, and C Ions Implanted Gan Epitaxial Layers

    Determination of Secondary-Ions Yield in SIMS Depth Profiling of Si, Mg, and C Ions Implanted Gan Epitaxial Layers by Tapajna, M., Vincze, A., Noga, P., Dobrovodsky, J., Svagatova, A., Hasenohr, S., Gregusova, D., Kuzmik, J.

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