Search Results - Swandono, S.

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  1. 1
    Electrical evidence of disorder at the SiO2/4H-SiC MOS interface and its effect on electron transport

    Electrical evidence of disorder at the SiO2/4H-SiC MOS interface and its effect on electron transport by Swandono, S., Penumatcha, A., Cooper, J. A.

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  2. 2
    Limitations of the High - Low C - V Technique for MOS Interfaces With Large Time Constant Dispersion

    Limitations of the High - Low C - V Technique for MOS Interfaces With Large Time Constant Dispersion by Penumatcha, A. V., Swandono, S., Cooper, J. A.

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    Limitations of the High-Low [Formula Omitted] -[Formula Omitted] Technique for MOS Interfaces With Large Time Constant Dispersion

    Limitations of the High-Low [Formula Omitted] -[Formula Omitted] Technique for MOS Interfaces With Large Time Constant Dispersion by Penumatcha, Ashish Verma, Swandono, Steven, Cooper, James A

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